Portland, OR, United States of America

John J Plombon

This inventor holds 28 USPTO granted patents and 28 published patent applications and 1 EPO patent, primarily in Semiconductor Technologies. Top assignee: Intel Corporation. Active years: 2008-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: John J Plombon. Retrieved from https://idiyas.com/inventor/john-j-plombon

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 28 

% Patents Active = 64.3

 

Average Co-Inventor Count = 5.5

ph-index = 4

Forward Citations = 62(Granted Patents)


Company Filing History:


Years Active: 2008-2026

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Areas of Expertise:
Ferroelectric Capacitors
Magnetoelectric Logic
Quantum Computing
Spin Orbit Torque
Memory Devices
Atomic Layer Deposition
Thin Films
Semiconductor Structures
High-K Dielectric
Ruthenium Barriers
Nitrides
Metal Interconnects
28 patents (USPTO):Explore Patents

Title: The Innovative Work of John J Plombon in Spin Orbit Torque Memory Devices

Introduction: John J Plombon is a prominent inventor based in Portland, OR, recognized for his contributions to advanced memory devices. With a remarkable portfolio of 23 patents, his inventions are at the forefront of technology that integrates magnetic and electronic materials.

Latest Patents: Plombon’s recent patents focus on Transition Metal Dichalcogenide (TMD) based memory devices. His first significant invention, titled "Transition Metal Dichalcogenide Based Spin Orbit Torque Memory Device," describes an apparatus that combines a magnetic insulating material with TMDs, creating stacks with unique properties. The configurations allow for innovative data storage solutions with enhanced performance due to the effective magnetization management.

The second patent, "Transition Metal Dichalcogenide Based Magnetoelectric Memory Device," outlines an apparatus that incorporates a magnetoelectric material alongside TMDs for advanced applications. This invention features multiple interconnects, enhancing the versatility and efficiency of memory systems, showcasing Plombon’s commitment to improving data retention and retrieval processes.

Career Highlights: Throughout his career, John J Plombon has made substantial contributions to the field of memory technology while working at Intel Corporation. His expertise in integrating materials science with electronic engineering has led to groundbreaking inventions that are pushing the boundaries of memory technologies.

Collaborations: Plombon has had the opportunity to collaborate with talented coworkers such as Adrien Lavoie and Harsono S Simka. These collaborations have fostered a creative environment, enabling innovative solutions that promote advancements in technologies related to memory devices and beyond.

Conclusion: John J Plombon stands out as a key figure in the development of next-generation memory technologies. His innovative patents reflect a deep understanding of materials science and engineering. With the ongoing evolution in the tech industry, Plombon’s work at Intel Corporation will likely have a lasting impact on how data is stored and processed in the years to come.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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