The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 04, 2023

Filed:

Dec. 29, 2021
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Chia-Ching Lin, Portland, OR (US);

Sasikanth Manipatruni, Portland, OR (US);

Tanay Gosavi, Hillsboro, OR (US);

Dmitri Nikonov, Beaverton, OR (US);

Benjamin Buford, Hillsboro, OR (US);

Kaan Oguz, Portland, OR (US);

John J. Plombon, Portland, OR (US);

Ian A. Young, Portland, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 50/85 (2023.01); H10B 61/00 (2023.01); H10N 50/80 (2023.01);
U.S. Cl.
CPC ...
H10N 50/85 (2023.02); H10B 61/22 (2023.02); H10N 50/80 (2023.02);
Abstract

An apparatus is provided which comprises: a stack comprising a magnetoelectric (ME such as BiFeO, (LaBi)FeO, LuFeO, PMN-PT, PZT, AlN, SmBiFeO, CrO, etc.) material and a transition metal dichalcogenide (TMD such as MoS, MoSe, WS, WSe, PtS, PtSe, WTe, MoTe, graphene, etc.); a magnet adjacent to a first portion of the TMD of the stack; a first interconnect adjacent to the magnet; a second interconnect adjacent to the ME material of the stack; and a third interconnect adjacent to a second portion of the TMD of the stack.


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