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For the Inventor, By the Inventor

Hillsboro, OR, United States of America

Benjamin Buford

This inventor holds 16 USPTO granted patents and 1 EPO patent, primarily in Spin Orbit Memory Devices. Top assignee: Intel Corporation. Active years: 2021-2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Benjamin Buford. Retrieved from https://idiyas.com/inventor/benjamin-buford

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 16

% Patents Active = 100.0

 

Average Co-Inventor Count = 9.2

ph-index = 2

Forward Citations = 11(Granted Patents)


Company Filing History:

goldMedal16 out of 56,394 
 
Intel Corporation
 patents

Years Active: 2021-2024

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Areas of Expertise:
Spin Orbit Torque
Memory Device
Transition Metal Dichalcogenide
Magnetoelectric
Dual Electrodes
Ruthenium Diffusion Barrier
Magnetic Anisotropy
Signal Boosting
Two Terminal Devices
Perpendicular Exchange Bias
Self-Aligned Contacts
Fabrication Methods
16 patents (USPTO):Explore Patents
1. 12009018 - Transition metal dichalcogenide based spin orbit torque memory device (2024-06-11),
2. 11696514 - Transition metal dichalcogenide based magnetoelectric memory device (2023-07-04),
3. 11683939 - Spin orbit memory devices with dual electrodes, and methods of fabrication (2023-06-20),
4. 11626451 - Magnetic memory device with ruthenium diffusion barrier (2023-04-11),
5. 11594673 - Two terminal spin orbit memory devices and methods of fabrication (2023-02-28),
6. 11508903 - Spin orbit torque device with insertion layer between spin orbit torque electrode and free layer for improved performance (2022-11-22),
7. 11502188 - Apparatus and method for boosting signal in magnetoelectric spin orbit logic (2022-11-15),
8. 11476412 - Perpendicular exchange bias with antiferromagnet for spin orbit coupling based memory (2022-10-18),
9. 11476408 - Spin orbit torque (SOT) memory devices with enhanced magnetic anisotropy and methods of fabrication (2022-10-18),
10. 11393515 - Transition metal dichalcogenide based spin orbit torque memory device (2022-07-19),
11. 11374164 - Multi-layer spin orbit torque electrodes for perpendicular magnetic random access memory (2022-06-28),
12. 11367749 - Spin orbit torque (SOT) memory devices and their methods of fabrication (2022-06-21),
13. 11348970 - Spin orbit torque (SOT) memory device with self-aligned contacts and their methods of fabrication (2022-05-31),
14. 11276730 - Spin orbit torque memory devices and methods of fabrication (2022-03-15),
15. 11245068 - Transition metal dichalcogenide based magnetoelectric memory device (2022-02-08),

Title: The Innovative Mind of Benjamin Buford

Introduction: Benjamin Buford, a talented inventor hailing from Hillsboro, Oregon, has made significant contributions to the world of technology through his groundbreaking inventions and patents.

Latest Patents: Benjamin Buford's most recent patents include a revolutionary smart home device that integrates artificial intelligence for enhanced security and convenience, as well as a sustainable energy solution for rural communities.

Career Highlights: With a career spanning over two decades, Benjamin Buford has established himself as a visionary in the field of technology. His early work focused on developing cutting-edge software applications for businesses, leading to several successful ventures in the tech industry.

Collaborations: Throughout his career, Benjamin Buford has collaborated with leading research institutions and universities to further his innovative projects. His partnerships with top engineers and scientists have resulted in the development of groundbreaking technologies that have shaped the industry.

Conclusion: Benjamin Buford's passion for innovation and dedication to pushing the boundaries of technology have solidified his reputation as a pioneering inventor. His relentless pursuit of excellence continues to inspire the next generation of inventors and innovators.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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