The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 15, 2022

Filed:

Jan. 11, 2019
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Kevin O'Brien, Portland, OR (US);

Christopher Wiegand, Portland, OR (US);

Tofizur Rahman, Portland, OR (US);

Noriyuki Sato, Hillsboro, OR (US);

Gary Allen, Portland, OR (US);

James Pellegren, Portland, OR (US);

Angeline Smith, Hillsboro, OR (US);

Tanay Gosavi, Hillsboro, OR (US);

Sasikanth Manipatruni, Portland, OR (US);

Kaan Oguz, Portland, OR (US);

Benjamin Buford, Hillsboro, OR (US);

Ian Young, Portland, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/22 (2006.01); H01L 43/04 (2006.01); H01L 43/14 (2006.01); H01L 43/08 (2006.01); H01L 43/10 (2006.01);
U.S. Cl.
CPC ...
H01L 27/228 (2013.01); H01L 43/04 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01); H01L 43/14 (2013.01);
Abstract

A perpendicular spin orbit memory device includes a first electrode having a magnetic material and platinum and a material layer stack on a portion of the first electrode. The material layer stack includes a free magnet, a fixed magnet above the first electrode, a tunnel barrier between the free magnet and the fixed magnet and a second electrode coupled with the fixed magnet.


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