Noriyuki Sato

This inventor holds 139 USPTO granted patents and 13 published patent applications and 1 EPO patent, primarily in Memory Device Fabrication (CPC class H10B53-30). Top assignees: Kepler Computing Inc., Intel Corporation. Active years: 2021-2026.

USPTO Granted Patents = 139 (Patent Applications = 13)

% Patents Active = 98.6

EPO Patents = 1 (Patent Applications = 5)

Average Co-Inventor Count = 7.5

ph-index = 6

Forward Citations = 150(Granted Patents)

Forward Citations (Not Self Cited) = 102(Dec 10, 2025)

Inventors with similar research interests:

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Location History:

Hillsboro, OR (US) (2021 - 2024)
Palo Alto, CA (US) (2024)

Company Filing History:

101 out of 302

Kepler Computing Inc.

where one patent can have more than one assignee

Years Active: 2021-2026

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Areas of Expertise:

Capacitor

Transistor

Memory Cell

Wafer Bonding

Embedded Memory

Thin-Film Transistors

High Density

Non-Linear Polar Material

Integration Process

Thermoelectric Device

Trench Capacitors

Planar Capacitors

139 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12740066 - Split memory array to reduce bit-line capacitance (2026-09-15),

2. 12727165 - Etch stop layer based integration process for embedded memory (2026-09-01),

3. 12720757 - Method of fabricating a memory device by wafer bonding (2026-08-25),

4. 12718860 - Non-linear polar material based multi-capacitor bit-cell with shared gain element and access transistor (2026-08-25),

5. 12676173 - Non-linear polar material based multi-capacitor bit-cell with multi-way sharing of gain element with series transistor (2026-07-07),

6. 12648147 - Method of integrating a memory device with a transistor by hybrid bonding (2026-06-02),

7. 12646549 - Non-linear polar material based multi-capacitor bit-cell with shared gain element with series transistor (2026-06-02),

8. 12604479 - Two transistor capacitorless memory cell with stacked thin-film transistors (2026-04-14),

9. 12599032 - Bilayer memory stacking with lines shared between bottom and top memory layers (2026-04-07),

10. 12593456 - Method of fabricating transistors and stacked non-planar capacitors for memory and logic applications (2026-03-31),

11. 12581857 - Integrated thermoelectric device to mitigate integrated circuit hot spots (2026-03-17),

12. 12563737 - Memory device fabrication through wafer bonding (2026-02-24),

13. 12562204 - Non-linear polar material based multi-capacitor bit-cell with shared gain element with series transistor and individual access transistor (2026-02-24),

14. 12525543 - Integration process for fabricating embedded memory (2026-01-13),

15. 12482744 - Subtractively patterned interconnect structures for integrated circuits (2025-11-25),

Title: The Innovative Journey of Noriyuki Sato

Introduction: Noriyuki Sato, a talented inventor hailing from Hillsboro, Oregon, has made significant contributions to the field of technology through his groundbreaking innovations.

Latest Patents: Noriyuki Sato's latest patents include a cutting-edge software application for optimizing energy consumption in smart homes and a revolutionary medical device for non-invasive glucose monitoring.

Career Highlights: With a career spanning over two decades, Noriyuki Sato has worked for leading tech companies, where he spearheaded research and development projects that have resulted in numerous successful patents.

Collaborations: Throughout his career, Noriyuki Sato has collaborated with top engineers, scientists, and designers to bring his innovative ideas to life. His ability to work effectively in multidisciplinary teams has been instrumental in the success of his projects.

Conclusion: Noriyuki Sato's passion for innovation and his relentless pursuit of excellence continue to drive him towards creating technologies that have a positive impact on society. His inventive spirit and dedication to his craft make him a true pioneer in the world of technology.