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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11476408 B1

PDFFull Text
Date of Patent:
Oct. 18, 2022

Filed:

Sep. 27, 2018

Spin orbit torque (sot) memory devices with enhanced magnetic anisotropy and methods of fabrication

Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Angeline Smith, Hillsboro, OR (US);

Sasikanth Manipatruni, Portland, OR (US);

Christopher Wiegand, Portland, OR (US);

Tofizur Rahman, Portland, OR (US);

Noriyuki Sato, Hillsboro, OR (US);

Benjamin Buford, Hillsboro, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:

Essential Patents Group, LLP

Primary Examiner:

Trang Q Tran

Int. Cl.
CPC ...
H01L 43/02 (2006.01); H01L 43/12 (2006.01); H01L 43/08 (2006.01); H01L 27/22 (2006.01); H01L 43/10 (2006.01); G11C 11/16 (2006.01);
U.S. Cl.
CPC ...
H01L 43/02 (2013.01); H01L 27/22 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01); H01L 43/12 (2013.01); G11C 11/161 (2013.01);
Abstract

A perpendicular spin orbit torque (SOT) memory device includes an electrode having a spin orbit coupling material and a perpendicular magnetic tunnel junction (pMTJ) device on a portion of the electrode. The pMTJ device includes a free magnet, a fixed magnet and a tunnel barrier layer in between, where at least one of the fixed magnet or the free magnet includes two magnetic layers and a spacer layer comprising tungsten in between.

Find Patent Forward Citations

Smith, Angeline. (2022). Spin orbit torque (sot) memory devices with enhanced magnetic anisotropy and methods of fabrication (U.S. Patent No. 11476408). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11476408

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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