The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2022
Filed:
Jun. 29, 2018
Intel Corporation, Santa Clara, CA (US);
Tanay Gosavi, Hillsboro, OR (US);
Sasikanth Manipatruni, Portland, OR (US);
Chia-Ching Lin, Portland, OR (US);
Kaan Oguz, Beaverton, OR (US);
Christopher Wiegand, Portland, OR (US);
Angeline Smith, Hillsboro, OR (US);
Noriyuki Sato, Hillsboro, OR (US);
Kevin O'Brien, Portland, OR (US);
Benjamin Buford, Hillsboro, OR (US);
Ian Young, Portland, OR (US);
Md Tofizur Rahman, Portland, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Embodiments herein relate to a system, apparatus, and/or process for producing a spin orbit torque (SOT) electrode that includes a first layer with a first side to couple with a free layer of a magnetic tunnel junction (MTJ) and a second layer coupled with a second side of the first layer opposite the first side, where a value of an electrical resistance in the first SOT layer is lower than a value of an electrical resistance in the second SOT layer and where a current applied to the SOT electrode is to cause current to preferentially flow in the first SOT layer to cause a magnetic polarization of the free layer to change directions. During production of the SOT electrode, the second layer may act as an etch stop.