Md Tofizur Rahman

This inventor holds 17 USPTO granted patents and 1 published patent application. Top assignees: Intel Corporation, Regents of the University of Minnesota. Active years: 2013-2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Md Tofizur Rahman. Retrieved from https://idiyas.com/inventor/md-tofizur-rahman

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 17 (Patent Applications = 1)

% Patents Active = 76.5

Average Co-Inventor Count = 7.0

ph-index = 3

Forward Citations = 37(Granted Patents)

Location History:

Falcon Heights, MN (US) (2013)
Portland, OR (US) (2017 - 2022)

Company Filing History:

Regents of the University of Minnesota

patents

Years Active: 2013-2022

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17 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 11437567 - Perpendicular spin transfer torque magnetic mechanism (2022-09-06),

2. 11404630 - Perpendicular spin transfer torque memory (pSTTM) devices with enhanced stability and method to form same (2022-08-02),

3. 11374164 - Multi-layer spin orbit torque electrodes for perpendicular magnetic random access memory (2022-06-28),

4. 11031545 - High stability free layer for perpendicular spin torque transfer memory (2021-06-08),

5. 10868233 - Approaches for strain engineering of perpendicular magnetic tunnel junctions (pMTJs) and the resulting structures (2020-12-15),

6. 10847714 - PSTTM device with multi-layered filter stack (2020-11-24),

7. 10804460 - Device, system and method for improved magnetic anisotropy of a magnetic tunnel junction (2020-10-13),

8. 10770651 - Perpendicular spin transfer torque memory (PSTTM) devices with enhanced perpendicular anisotropy and methods to form same (2020-09-08),

9. 10732217 - Ferromagnetic resonance testing of buried magnetic layers of whole wafer (2020-08-04),

10. 10636960 - Strained perpendicular magnetic tunnel junction devices (2020-04-28),

11. 10559744 - Texture breaking layer to decouple bottom electrode from PMTJ device (2020-02-11),

12. 10418415 - Interconnect capping process for integration of MRAM devices and the resulting structures (2019-09-17),

13. 10340445 - PSTTM device with bottom electrode interface material (2019-07-02),

14. 10326075 - PSTTM device with multi-layered filter stack (2019-06-18),

15. 10079266 - Modulation of magnetic properties through implantation and associated structures (2018-09-18),

Title: Innovations of Md Tofizur Rahman

Introduction

Md Tofizur Rahman is a prominent inventor based in Portland, OR (US). He has made significant contributions to the field of magnetic memory devices, holding a total of 17 patents. His work focuses on enhancing the stability and efficiency of perpendicular spin transfer torque memory devices.

Latest Patents

Among his latest patents is the "Perpendicular spin transfer torque magnetic mechanism." This invention comprises a magnetic tunnel junction (MTJ) that includes a free magnetic layer, a fixed magnetic layer, and a tunnel barrier. The tunnel barrier directly contacts a first side of the free layer, while a capping layer is positioned on the second side of the free magnetic layer. Additionally, he has developed a patent for "Perpendicular spin transfer torque memory (pSTTM) devices with enhanced stability and method to form same." This patent describes a material layer stack for a pSTTM memory device, which includes an MTJ stack, an oxide layer, a protective layer, and a capping layer. The design aims to improve the perpendicularity of the pSTTM material layer stack and enhance the stability of the devices.

Career Highlights

Md Tofizur Rahman has worked with notable organizations such as Intel Corporation and the University of Minnesota. His experience in these institutions has allowed him to collaborate on cutting-edge research and development projects in the field of magnetic memory technology.

Collaborations

Some of his coworkers include Christopher J Wiegand and Kaan Oguz. Their collaborative efforts have contributed to the advancement of innovative technologies in the industry.

Conclusion

Md Tofizur Rahman is a distinguished inventor whose work in magnetic memory devices has led to numerous patents and advancements in technology. His contributions continue to influence the field and pave the way for future innovations.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

1 patent pending: