The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2020
Filed:
Sep. 25, 2015
Intel Corporation, Santa Clara, CA (US);
Prashanth P. Madras, Portland, OR (US);
MD Tofizur Rahman, Portland, OR (US);
Christopher J. Wiegand, Portland, OR (US);
Brian Maertz, Portland, OR (US);
Oleg Golonzka, Beaverton, OR (US);
Kevin P. O'Brien, Portland, OR (US);
Mark L. Doczy, Portland, OR (US);
Brian S. Doyle, Portland, OR (US);
Tahir Ghani, Portland, OR (US);
Kaan Oguz, Beaverton, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
MTJ material stacks with a laterally strained free magnetic layer, STTM devices employing such stacks, and computing platforms employing such STTM devices. In some embodiments, perpendicular pMTJ material stacks included free magnetic layers that are compressively strained laterally by a surrounding material, which increases coercive field strength for a more stable device. In some embodiments, a pMTJ material stack is encased in a compressive-stressed material. In some further embodiments, a pMTJ material stack is encased first in a dielectric shell, permitting a conductive material to be deposited over the shell as the compressive-stressed, strain-inducing material layer.