Beaverton, OR, United States of America

Oleg Golonzka

This inventor holds 87 USPTO granted patents and 32 published patent applications and 5 EPO patents, primarily in Integrated Circuit Structures (CPC class H01L43-12). Top assignees: Intel Corporation, Mcafee, Inc.. Active years: 2005-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Oleg Golonzka. Retrieved from https://idiyas.com/inventor/oleg-golonzka

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 87 

% Patents Active = 87.4

 

Average Co-Inventor Count = 4.6

ph-index = 6

Forward Citations = 199(Granted Patents)

Forward Citations (Not Self Cited) = 144(Dec 10, 2025)


Inventors with similar research interests:

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Company Filing History:


Years Active: 2005-2026

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Areas of Expertise:
Gate-All-Around
Integrated Circuit
Magnetic Memory
Resistive Random Access Memory
Fabrication Methods
Channel-Substrate Contact
Trench Contact
Tapered Plugs
Dipole Layer
Threshold Voltages
Sub-Fin Electrical Contact
High-K Encapsulation
87 patents (USPTO):Explore Patents

Title: Oleg Golonzka: A Pioneer in Integrated Circuit Innovations

Introduction

Oleg Golonzka, based in Beaverton, OR, is a renowned inventor with a remarkable portfolio of 73 patents. His contributions to the field of integrated circuits have significantly advanced technology. His work focuses on innovative structures that improve the efficiency and performance of microelectronic devices.

Latest Patents

Among his latest patents, Golonzka has worked on "Gate-all-around integrated circuit structures having a removed substrate" and the corresponding methods of fabrication. This patented technology details an integrated circuit structure that features a vertical arrangement of horizontal nanowires, surrounded by a gate stack that encompasses the channel region. Another notable aspect includes a pair of non-discrete epitaxial source or drain structures positioned at both ends of the nanowires, along with dielectric spacers that maintain coplanar surfaces with the gate stack and the source or drain structures. Additionally, his patent on methods of forming stacked trench contacts outlines techniques for creating microelectronic devices that utilize layered contact metals, which improves substrate integration.

Career Highlights

Throughout his career, Oleg Golonzka has contributed to major companies, including Intel Corporation and McAfee, Inc. His experience at Intel, a leader in semiconductor manufacturing, allowed him to develop cutting-edge technologies in integrated circuit design. At McAfee, he leveraged his expertise in enhancing microelectronic security solutions.

Collaborations

Golonzka has collaborated with distinguished professionals in the field, including Tahir Ghani and Christopher J Wiegand. Together, they have contributed to groundbreaking advancements in integrated circuit design and fabrication.

Conclusion

Oleg Golonzka's extensive patent portfolio and his influential work at leading technology companies underscore his status as a key innovator in the field of integrated circuits. His contributions continue to shape the future of microelectronics, showcasing the importance of innovation in driving technological progress.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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