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For the Inventor, By the Inventor

Yorktown Heights, NY, United States of America

Guohan Hu

USPTO Granted Patents = 70 

Average Co-Inventor Count = 2.1

ph-index = 6

Forward Citations = 127(Granted Patents)

Forward Citations (Not Self Cited) = 94(Dec 10, 2025)


Inventors with similar research interests:


Company Filing History:

goldMedal70 out of 164,197 
 
International Business Machines Corporation
 patents
silverMedal8 out of 131,611 
 
Samsung Electronics Co., Ltd.
 patents
bronzeMedal2 out of 9,152 
 
Industrial Technology Research Institute
 patents
where one patent can have more than one assignee

Years Active: 2012-2025

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Areas of Expertise:
Magnetoresistive Random-Access Memory
Spin-Transfer Torque MRAM
Magnetic Tunnel Junctions
Perpendicular Magnetic Anisotropy
Magnetic Domain Wall Shift Register
Antiferromagnetic Multilayers
Cobalt Iron Boride
Magnetic Exchange Coupling
In-Situ Annealing
Low Magnetic Moment Materials
Thin Reference Layers
Current Constriction
70 patents (USPTO):Explore Patents
1. 12464957 - Textured cobalt aluminum/magnesium-aluminum-oxide pedestal for memory devices (2025-11-04),
2. 12364164 - Reactive serial resistance reduction for magnetoresistive random-access memory devices (2025-07-15),
3. 12190925 - Magnetic exchange coupled MTJ free layer having low switching current and high data retention (2025-01-07),
4. 12063868 - Low RA narrow base modified double magnetic tunnel junction structure (2024-08-13),
5. 11972785 - MRAM structure with enhanced magnetics using seed engineering (2024-04-30),
6. 11557628 - Multilayered magnetic free layer structure containing an ordered magnetic alloy first magnetic free layer for spin-transfer torque (STT) MRAM (2023-01-17),
7. 11527707 - In-situ annealing and etch back steps to improve exchange stiffness in cobalt iron boride based perpendicular magnetic anisotropy free layers (2022-12-13),
8. 11501810 - Amorphous spin diffusion layer for modified double magnetic tunnel junction structure (2022-11-15),
9. 11342115 - Planar solenoid inductors with antiferromagnetic pinned cores (2022-05-24),
10. 11302863 - STT MRAM matertails with heavy metal insertion (2022-04-12),
11. 11264559 - Multilayered magnetic free layer structure for spin-transfer torque (STT) MRAM (2022-03-01),
12. 11223010 - Thin reference layer for STT MRAM (2022-01-11),
13. 11222746 - Method for forming a planar solenoid inductor (2022-01-11),
14. 10916581 - Multilayered magnetic free layer structure containing an ordered magnetic alloy first magnetic free layer for spin-transfer torque (STT) MRAM (2021-02-09),
15. 10833253 - Low magnetic moment materials for spin transfer torque magnetoresistive random access memory devices (2020-11-10),

Title: Guohan Hu - Pioneering Inventor from Yorktown Heights

Introduction: Guohan Hu is a distinguished inventor based in Yorktown Heights, NY, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Guohan Hu holds several patents in the areas of artificial intelligence, machine learning, and quantum computing, showcasing his expertise in cutting-edge technologies.

Career Highlights: With a career spanning over two decades, Guohan Hu has worked with leading tech companies, research institutions, and universities, driving forward the boundaries of technological advancements.

Collaborations: Throughout his career, Guohan Hu has collaborated with top researchers, scientists, and engineers globally, fostering a culture of innovation and knowledge sharing in the tech industry.

Conclusion: Guohan Hu's relentless pursuit of innovation and his passion for pushing the boundaries of technology make him a true visionary in the field of inventions.

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