Yorktown Heights, NY, United States of America

Guohan Hu

This inventor holds 74 USPTO granted patents and 15 published patent applications and 1 EPO patent, primarily in Magnetic Memory Devices (CPC class H01L). Top assignees: International Business Machines Corporation, Samsung Electronics Co., Ltd., Industrial Technology Research Institute. Active years: 2012-2026.

USPTO Granted Patents = 74 (Patent Applications = 15)

% Patents Active = 66.2

EPO Patents = 1 (Patent Applications = 4)

Average Co-Inventor Count = 2.1

ph-index = 6

Forward Citations = 130(Granted Patents)

Forward Citations (Not Self Cited) = 94(Dec 10, 2025)

Inventors with similar research interests:

Company Filing History:

74 out of 166,264

International Business Machines Corporation

patents

8 out of 132,108

Samsung Electronics Co., Ltd.

patents

2 out of 9,301

Industrial Technology Research Institute

patents

where one patent can have more than one assignee

Years Active: 2012-2026

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Areas of Expertise:

Spin-Transfer Torque

Magnetic Tunnel Junction

MRAM

Magnetic Anisotropy

Magnetoresistance

Cobalt Iron Boride

Memory Devices

Magnetic Structures

Double Tunnel Junction

Cap Layer

Iron Insertion

Dynamic Reference Layer

74 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12727390 - Magnetic tunnel junction free layer of multiple materials (2026-09-01),

2. 12713839 - FREE LAYER IN MAGNETORESISTIVE RANDOM-ACCESS MEMORY (2026-08-18),

3. 12610555 - Multilayered magnetic free layer structure for spin-transfer torque (STT) MRAM (2026-04-21),

4. 12575330 - Ordered alloy magnetic tunnel junction with simplified seed structure (2026-03-10),

5. 12464957 - Textured cobalt aluminum/magnesium-aluminum-oxide pedestal for memory devices (2025-11-04),

6. 12364164 - Reactive serial resistance reduction for magnetoresistive random-access memory devices (2025-07-15),

7. 12190925 - Magnetic exchange coupled MTJ free layer having low switching current and high data retention (2025-01-07),

8. 12063868 - Low RA narrow base modified double magnetic tunnel junction structure (2024-08-13),

9. 11972785 - MRAM structure with enhanced magnetics using seed engineering (2024-04-30),

10. 11557628 - Multilayered magnetic free layer structure containing an ordered magnetic alloy first magnetic free layer for spin-transfer torque (STT) MRAM (2023-01-17),

11. 11527707 - In-situ annealing and etch back steps to improve exchange stiffness in cobalt iron boride based perpendicular magnetic anisotropy free layers (2022-12-13),

12. 11501810 - Amorphous spin diffusion layer for modified double magnetic tunnel junction structure (2022-11-15),

13. 11342115 - Planar solenoid inductors with antiferromagnetic pinned cores (2022-05-24),

14. 11302863 - STT MRAM matertails with heavy metal insertion (2022-04-12),

15. 11264559 - Multilayered magnetic free layer structure for spin-transfer torque (STT) MRAM (2022-03-01),

Title: Guohan Hu - Pioneering Inventor from Yorktown Heights

Introduction: Guohan Hu is a distinguished inventor based in Yorktown Heights, NY, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Guohan Hu holds several patents in the areas of artificial intelligence, machine learning, and quantum computing, showcasing his expertise in cutting-edge technologies.

Career Highlights: With a career spanning over two decades, Guohan Hu has worked with leading tech companies, research institutions, and universities, driving forward the boundaries of technological advancements.

Collaborations: Throughout his career, Guohan Hu has collaborated with top researchers, scientists, and engineers globally, fostering a culture of innovation and knowledge sharing in the tech industry.

Conclusion: Guohan Hu's relentless pursuit of innovation and his passion for pushing the boundaries of technology make him a true visionary in the field of inventions.