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For the Inventor, By the Inventor

Yorktown Heights, NY, United States of America

Guohan Hu

This inventor holds 74 USPTO granted patents and 15 published patent applications and 1 EPO patent, primarily in Magnetic Memory Devices (CPC class H01L). Top assignees: International Business Machines Corporation, Samsung Electronics Co., Ltd., Industrial Technology Research Institute. Active years: 2012-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Guohan Hu. Retrieved from https://idiyas.com/inventor/guohan-hu

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 74 

% Patents Active = 66.2

 

Average Co-Inventor Count = 2.1

ph-index = 6

Forward Citations = 130(Granted Patents)

Forward Citations (Not Self Cited) = 94(Dec 10, 2025)


Inventors with similar research interests:


Company Filing History:

goldMedal74 out of 166,409 
 
International Business Machines Corporation
 patents
silverMedal8 out of 132,108 
 
Samsung Electronics Co., Ltd.
 patents
bronzeMedal2 out of 9,308 
 
Industrial Technology Research Institute
 patents
where one patent can have more than one assignee

Years Active: 2012-2026

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Areas of Expertise:
Spin-Transfer Torque
Magnetic Tunnel Junction
MRAM
Magnetic Anisotropy
Magnetoresistance
Cobalt Iron Boride
Memory Devices
Magnetic Structures
Double Tunnel Junction
Cap Layer
Iron Insertion
Dynamic Reference Layer
74 patents (USPTO):Explore Patents
1. 12727390 - Magnetic tunnel junction free layer of multiple materials (2026-09-01),
2. 12713839 - FREE LAYER IN MAGNETORESISTIVE RANDOM-ACCESS MEMORY (2026-08-18),
3. 12610555 - Multilayered magnetic free layer structure for spin-transfer torque (STT) MRAM (2026-04-21),
4. 12575330 - Ordered alloy magnetic tunnel junction with simplified seed structure (2026-03-10),
5. 12464957 - Textured cobalt aluminum/magnesium-aluminum-oxide pedestal for memory devices (2025-11-04),
6. 12364164 - Reactive serial resistance reduction for magnetoresistive random-access memory devices (2025-07-15),
7. 12190925 - Magnetic exchange coupled MTJ free layer having low switching current and high data retention (2025-01-07),
8. 12063868 - Low RA narrow base modified double magnetic tunnel junction structure (2024-08-13),
9. 11972785 - MRAM structure with enhanced magnetics using seed engineering (2024-04-30),
10. 11557628 - Multilayered magnetic free layer structure containing an ordered magnetic alloy first magnetic free layer for spin-transfer torque (STT) MRAM (2023-01-17),
11. 11527707 - In-situ annealing and etch back steps to improve exchange stiffness in cobalt iron boride based perpendicular magnetic anisotropy free layers (2022-12-13),
12. 11501810 - Amorphous spin diffusion layer for modified double magnetic tunnel junction structure (2022-11-15),
13. 11342115 - Planar solenoid inductors with antiferromagnetic pinned cores (2022-05-24),
14. 11302863 - STT MRAM matertails with heavy metal insertion (2022-04-12),
15. 11264559 - Multilayered magnetic free layer structure for spin-transfer torque (STT) MRAM (2022-03-01),

Title: Guohan Hu - Pioneering Inventor from Yorktown Heights

Introduction: Guohan Hu is a distinguished inventor based in Yorktown Heights, NY, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Guohan Hu holds several patents in the areas of artificial intelligence, machine learning, and quantum computing, showcasing his expertise in cutting-edge technologies.

Career Highlights: With a career spanning over two decades, Guohan Hu has worked with leading tech companies, research institutions, and universities, driving forward the boundaries of technological advancements.

Collaborations: Throughout his career, Guohan Hu has collaborated with top researchers, scientists, and engineers globally, fostering a culture of innovation and knowledge sharing in the tech industry.

Conclusion: Guohan Hu's relentless pursuit of innovation and his passion for pushing the boundaries of technology make him a true visionary in the field of inventions.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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