The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2025
Filed:
Jun. 25, 2021
Intel Corporation, Santa Clara, CA (US);
Mohammad Hasan, Aloha, OR (US);
Biswajeet Guha, Hillsboro, OR (US);
Oleg Golonzka, Beaverton, OR (US);
Leonard P. Guler, Hillsboro, OR (US);
Leah Shoer, Beaverton, OR (US);
Daniel G. Ouellette, Portland, OR (US);
Pedro Franco Navarro, Portland, OR (US);
Tahir Ghani, Portland, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Integrated circuit structures having metal gates with tapered plugs, and methods of fabricating integrated circuit structures having metal gates with tapered plugs, are described. For example, includes a fin having a portion protruding above a shallow trench isolation (STI) structure. A gate dielectric material layer is over the protruding portion of the fin and over the STI structure. A conductive gate layer is over the gate dielectric material layer. A conductive gate fill material is over the conductive gate layer. A dielectric gate plug is laterally spaced apart from the fin. The dielectric gate plug is on the STI structure, and the dielectric gate plug has sides tapered outwardly from a top of the dielectric gate plug to a bottom of the dielectric gate plug.