The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2026
Filed:
Jun. 24, 2021
Applicant:
Intel Corporation, Santa Clara, CA (US);
Inventors:
Leonard P. Guler, Hillsboro, OR (US);
Oleg Golonzka, Beaverton, OR (US);
Charles H. Wallace, Portland, OR (US);
Tahir Ghani, Portland, OR (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 84/01 (2026.01); H10D 84/03 (2025.01);
U.S. Cl.
CPC ...
H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 62/115 (2025.01); H10D 62/121 (2025.01); H10D 84/0151 (2025.01); H10D 84/038 (2025.01);
Abstract
Released fins for advanced integrated circuit structure fabrication are described. For example, an integrated circuit structure includes a sub-fin. A dielectric spacer material is on the sub-fin. A fin is on the dielectric spacer material. A void in the dielectric spacer material, the void vertically between the sub-fin and the fin.