Beaverton, OR, United States of America

Mark L Doczy

USPTO Granted Patents = 206 

 

Average Co-Inventor Count = 6.0

ph-index = 37

Forward Citations = 4,518(Granted Patents)

Forward Citations (Not Self Cited) = 4,207(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Meridian, ID (US) (2011)
  • Austin, TX (US) (2012)
  • Porland, OR (US) (2018)
  • Beaverton, CA (US) (2020)
  • Portland, OR (US) (2014 - 2022)
  • Beaverton, OR (US) (2003 - 2024)

Company Filing History:


Years Active: 2003-2024

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Areas of Expertise:
Perpendicular Spin Transfer Torque Memory
Magnetic Tunnel Junction
Spin Orbit Torque Memory
Magnetic Anisotropy
Strain Engineering
Ferromagnetic Resonance
Memory Devices
Transistor Fabrication
High Stability Free Layer
Magnetic Skyrmions
Tunneling Magnetoresistance
Magnetoresistive Random Access Memory
206 patents (USPTO):Explore Patents

Title: Mark L Doczy: A Pioneer in Perpendicular Spin Transfer Torque Memory Devices

Introduction:

Mark L Doczy is a prolific inventor who has made significant contributions to the field of spin transfer torque memory devices. With a location in Beaverton, Oregon, he has a remarkable patent count of 205, demonstrating his expertise and dedication to innovation. In this article, we will delve into his latest patents, career highlights, collaborations, and conclude with the impact of his work.

Latest Patents:

Mark L Doczy's latest patents showcase his expertise in the development of perpendicular spin transfer torque memory (pSTTM) devices with enhanced thermal stability and methods for their formation. Some key features of his patents include the utilization of a free magnet, fixed magnet, tunnel barrier, coupling layer, and a magnetic skyrmion follower. By leveraging these elements, Doczy aims to enhance the efficiency and reliability of pSTTM devices.

Career Highlights:

During his impressive career, Mark L Doczy has contributed significantly to the advancements in memory technology. Notably, he has worked with renowned companies such as Intel Corporation and Planar Systems, Inc. These collaborations have allowed him to explore new possibilities and push the boundaries of innovation in the semiconductor industry. Through his diverse experiences, Doczy has gained invaluable insights into the intricacies of developing cutting-edge technologies.

Collaborations:

Throughout his journey, Mark L Doczy has had the privilege of working alongside accomplished individuals. Two of his notable coworkers include Robert S Chau and Justin K Brask. Collaborating with colleagues of this caliber has undoubtedly enriched his understanding of the subject matter and catalyzed innovative thinking. The power of collaboration within the realm of innovation cannot be overstated, and Doczy's partnerships are a testament to this fact.

Conclusion:

Mark L Doczy's contributions to the field of spin transfer torque memory devices are truly remarkable. His portfolio of 205 patents, including his latest breakthroughs, demonstrates his pioneering work in developing pSTTM devices with enhanced thermal stability. Through his career highlights and collaborations, Doczy has proven himself to be a prominent figure in the advancement of memory technology. As we marvel at his significant contributions, we eagerly anticipate further innovation from this extraordinary inventor.

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