Intel Corporation

Other

Tahoe Research, Ltd.

Planar Systems, Inc.

Mark L Doczy

Robert S Chau

Justin K Brask

Jack T Kavalieros

Matthew V Metz

Suman Datta

Brian S Doyle

Kaan Oguz

Uday Shah

Charles C Kuo

Kevin O'Brien

Chris E Barns

Satyarth Suri

Gilbert W Dewey

Christopher J Wiegand

David L Kencke

Tahir Ghani

Oleg Golonzka

John P Barnak

Md Tofizur Rahman

Justin Brockman

Marko Radosavljevic

Amlan Majumdar

Roksana Golizadeh Mojarad

Elijah V Karpov

Been-Yih Jin

Scott A Hareland

Markus Kuhn

Mantu K Hudait

Brian Maertz

Robert B Turkot, Jr

Noriyuki Sato

Annalisa Cappellani

Steven J Keating

Daniel Ouellette

Sangwoo Pae

Reza Arghavani

Michael L McSwiney

Adrian B Sherrill

Adrien Lavoie

Valery M Dubin

James M Blackwell

Kari Härkönen

Juan G Alzate Vinasco

Christopher D Thomas

Clair C Webb

Teemu Lang

Majumdar Amian

Nathan E Baxter

Anand S Murthy

Mark T Bohr

Prashant Majhi

Boyan Boyanov

Robert L Bristol

Mark Y Liu

Nick Lindert

Harsono S Simka

Juan E Dominguez

Brian E Roberds

Tejaswi K Indukuri

John J Plombon

Joseph Han

Tofizur Rahman

Ying Zhou

Ramune Nagisetty

Jacob M Jensen

Michael Y Chan

Jack Kavalleros

Collin Borla

Sasikanth Manipatruni

Ravi Pillarisetty

Willy Rachmady

Niloy Mukherjee

Tanay Gosavi

Yih Wang

Martin D Giles

Timothy E Glassman

Jack Hwang

Lawrence D Wong

Anne E Miller

Jose A Maiz

Angeline Smith

Mitchell C Taylor

Daniel B Bergstrom

Benjamin Buford

Kevin P O'brien

Everett X Wang

Been Y Jin

Mark Stettler

Lucian Shifren

Majumdar Amlan

Amian Majumdar

Robert L Norman

Kevin P OBrien

Brian S Dovle

Matthew V Mertz

Philippe Matagne

Matt Prince

Terence Bacuita

Paul R Markworth

A method of fabricating a MOS transistor having a thinned channel region is described. The channel region is etched following removal of a dummy gate. The source and drain regions have relatively low resistance with the process.

Method for fabricating transistor with thinned channel

A pSTTM device includes a first electrode and a second electrode, a free magnet between the first electrode and the second electrode, a fixed magnet between the first electrode and the second electrode, a tunnel barrier between the free magnet and the fixed magnet, a coupling layer between the free magnet and the first electrode, where the coupling layer comprises a metal and oxygen and a follower between the coupling layer and the first electrode, wherein the follower comprises a magnetic skyrmion. The skyrmion follower may be either magnetically and electrically coupled to the free magnet to form a coupled system of switching magnetic layers. In an embodiment, the skyrmion follower has a weaker magnetic anisotropy than an anisotropy of the free magnet.

Perpendicular spin transfer torque memory (pSTTM) devices with enhanced thermal stability and methods to form the same

An apparatus comprises a magnetic tunnel junction (MTJ) including a free magnetic layer, a fixed magnetic layer, and a tunnel barrier between the free and fixed layers, the tunnel barrier directly contacting a first side of the free layer, a capping layer contacting the second side of the free magnetic layer and boron absorption layer positioned a fixed distance above the capping layer.

Perpendicular spin transfer torque magnetic mechanism

A magnetic tunneling junction (MTJ) memory device including a free and fixed (reference) magnet between first and second electrodes, and a synthetic antiferromagnet structure (SAF) structure between the fixed magnet and one of the electrodes. The SAF structure includes a magnetic skyrmion. Two magnetic skyrmions within a SAF structure may have opposing polarity. A SAF structure may further include a coupling layer between two magnetic layers, as well as interface layers separated from the coupling layer by one of the magnetic layers. The coupling layer may have a spin-orbit coupling effect on the magnetic layers that is of a sign opposite that of the interface layers, for example to promote formation of the magnetic skyrmions.

Magnetic tunnel junction (MTJ) devices with a synthetic antiferromagnet (SAF) structure including a magnetic skyrmion

A material layer stack for a pSTTM memory device includes a magnetic tunnel junction (MTJ) stack, a oxide layer, a protective layer and a capping layer. The MTJ includes a fixed magnetic layer, a tunnel barrier disposed above the fixed magnetic layer and a free magnetic layer disposed on the tunnel barrier. The oxide layer, which enables an increase in perpendicularity of the pSTTM material layer stack, is disposed on the free magnetic layer. The protective layer is disposed on the oxide layer, and acts as a protective barrier to the oxide from physical sputter damage during subsequent layer deposition. A conductive capping layer with a low oxygen affinity is disposed on the protective layer to reduce iron-oxygen de-hybridization at the interface between the free magnetic layer and the oxide layer. The inherent non-oxygen scavenging nature of the conductive capping layer enhances stability and reduces retention loss in pSTTM devices.

Perpendicular spin transfer torque memory (pSTTM) devices with enhanced stability and method to form same

A MTJ device includes a free (storage) magnet and fixed (reference) magnet between first and second electrodes, and a programmable booster between the free magnet and one of the electrodes. The booster has a magnetic material layer. The booster may further have an interface layer that supports the formation of a skyrmion spin texture, or a stable ferromagnetic domain, within the magnetic material layer. A programming current between two circuit nodes may be employed to set a position of the skyrmion or magnetic domain within the magnetic material layer to be more proximal to, or more distal from, the free magnet. The position of the skyrmion or magnetic domain to the MTJ may modulate TMR ratio of the MTJ device. The TMR ratio modulation may be employed to discern more than two states of the MTJ device. Such a multi-level device may, for example, be employed to storebits/cell.

Multi-level magnetic tunnel junction (MTJ) devices including mobile magnetic skyrmions or ferromagnetic domains

A spin orbit torque (SOT) memory device includes an SOT electrode on an upper end of an MTJ device. The MTJ device includes a free magnet, a fixed magnet and a tunnel barrier between the free magnet and the fixed magnet and is coupled with a conductive interconnect at a lower end of the MTJ device. The SOT electrode has a footprint that is substantially the same as a footprint of the MTJ device. The SOT device includes a first contact and a second contact on an upper surface of the SOT electrode. The first contact and the second contact are laterally spaced apart by a distance that is no greater than a length of the MTJ device.

Spin orbit torque (SOT) memory device with self-aligned contacts and their methods of fabrication

A perpendicular spin transfer torque memory (pSTTM) device incorporates a magnetic tunnel junction (MTJ) device having a free magnetic stack that includes a plurality of magnetic layers interleaved with a plurality of non-magnetic insert layers. The layers are arranged such that the topmost and bottommost layers are magnetic layers. The stacked design decreases the damping of the MTJ free magnetic stack, beneficially reducing the write current required to write to the pSTTM device. The stacked design further increases the interface anisotropy, thereby beneficially improving the stability of the pSTTM device. The non-magnetic interface layer may include tantalum, molybdenum, tungsten, hafnium, or iridium, or a binary alloy containing at least two of tantalum, molybdenum, tungsten hafnium, or iridium.

Perpendicular STTM multi-layer insert free layer

A perpendicular spin orbit torque (SOT) memory device includes an electrode having a spin orbit torque material, where the SOT material includes iridium and manganese and a perpendicular magnetic tunnel junction (pMTJ) device on a portion of the electrode. The pMTJ device includes a free magnet structure electrode, a fixed layer and a tunnel barrier between the free layer and the fixed layer and a SAF structure above the fixed layer. The Ir&#x2014;Mn SOT material and the free magnet have an in-plane magnetic exchange bias.

Spin orbit torque (SOT) memory devices with enhanced tunnel magnetoresistance ratio and their methods of fabrication

A spin orbit torque (SOT) memory device includes a MTJ device on a SOT electrode, where a first portion of the SOT electrode extends beyond a sidewall of the MTJ by a first length that is no greater than a height of the MTJ, and where a second portion of the first electrode extends from the sidewall and under the MTJ by a second length that is no greater than a width of the MTJ. The MTJ device includes a free magnet, a fixed magnet and a tunnel barrier between the free magnet and the fixed magnet.

Self-aligned spin orbit torque (SOT) memory devices and their methods of fabrication

A method of manufacturing a semiconductor device and a novel semiconductor device are disclosed herein. An exemplary method includes sputtering a capping layer in-situ on a gate dielectric layer, before any high temperature processing steps are performed. Vacancies in the gate dielectric layer may be filled with capping layer material.

Gate electrode having a capping layer

Systems, apparatus, and methods for magnetoresitive memory are described. An apparatus for magnetoresitive memory includes a fixed layer, a free layer, and a tunneling barrier between the fixed layer and the free layer. The free layer is a new alloy consisting of a composition of Cobalt (Co), Iron (Fe), and Boron (B) intermixed with a non-magnetic metal according to a ratio. A thin insert layer of CoFeB may optionally be added between the alloy and the tunneling barrier.

High stability free layer for perpendicular spin torque transfer memory

The present disclosure relates to the fabrication of spin transfer torque memory devices, wherein a magnetic tunnel junction of the spin transfer torque memory device is formed with Heusler alloys as the fixed and free magnetic layers and a tunnel barrier layer disposed between and abutting the fixed Heusler magnetic layer and the free Heusler magnetic layer, wherein the tunnel barrier layer is lattice matched to the free Heusler magnetic layer. In one embodiment, the tunnel barrier layer may be a strontium titanate layer.

Spin transfer torque memory devices having heusler magnetic tunnel junctions

A perpendicular spin transfer torque memory (pSTTM) device incorporates a magnetic tunnel junction (MTJ) device having a free magnetic stack and a fixed magnetic stack separated by a dielectric tunneling layer. The free magnetic stack includes an uppermost magnetic layer that is at least partially covered by a cap layer. The cap layer is at least partially covered by a protective layer containing at least one of: ruthenium (Ru); cobalt/iron/boron (CoFeB); molybdenum (Mo); cobalt (Co); tungsten (W); or platinum (Pt). The protective layer is at least partially covered by a cap metal layer which may form a portion of MTJ electrode. The protective layer minimizes the occurrence of physical and/or chemical attack of the cap layer by the materials used in the cap metal layer, beneficially improving the interface anisotropy of the MTJ free magnetic layer.

Perpendicular STTM free layer including protective cap

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Beaverton, OR, United States of America

Mark L Doczy