The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2022
Filed:
Jun. 28, 2018
Intel Corporation, Santa Clara, CA (US);
Kevin O'Brien, Portland, OR (US);
Kaan Oguz, Portland, OR (US);
Noriyuki Sato, Hillsboro, OR (US);
Charles Kuo, Hillsboro, OR (US);
Mark Doczy, Beaverton, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
A magnetic tunneling junction (MTJ) memory device including a free and fixed (reference) magnet between first and second electrodes, and a synthetic antiferromagnet structure (SAF) structure between the fixed magnet and one of the electrodes. The SAF structure includes a magnetic skyrmion. Two magnetic skyrmions within a SAF structure may have opposing polarity. A SAF structure may further include a coupling layer between two magnetic layers, as well as interface layers separated from the coupling layer by one of the magnetic layers. The coupling layer may have a spin-orbit coupling effect on the magnetic layers that is of a sign opposite that of the interface layers, for example to promote formation of the magnetic skyrmions.