The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 08, 2021
Filed:
Sep. 30, 2016
Intel Corporation, Santa Clara, CA (US);
Kaan Oguz, Portland, OR (US);
Kevin P. O'Brien, Portland, OR (US);
Brian S. Doyle, Portland, OR (US);
Mark L. Doczy, Beaverton, OR (US);
Charles C. Kuo, Hillsboro, OR (US);
Daniel G. Ouellette, Portland, OR (US);
Christopher J. Wiegand, Portland, OR (US);
Md Tofizur Rahman, Portland, OR (US);
Brian Maertz, Santa Barbara, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Systems, apparatus, and methods for magnetoresitive memory are described. An apparatus for magnetoresitive memory includes a fixed layer, a free layer, and a tunneling barrier between the fixed layer and the free layer. The free layer is a new alloy consisting of a composition of Cobalt (Co), Iron (Fe), and Boron (B) intermixed with a non-magnetic metal according to a ratio. A thin insert layer of CoFeB may optionally be added between the alloy and the tunneling barrier.