The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 22, 2022

Filed:

Mar. 31, 2018
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Kaan Oguz, Portland, OR (US);

Tanay Gosavi, Hillsboro, OR (US);

Sasikanth Manipatruni, Portland, OR (US);

Charles Kuo, Hillsboro, OR (US);

Mark Doczy, Beaverton, OR (US);

Kevin O'Brien, Portland, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01F 10/32 (2006.01); H01F 41/30 (2006.01); G11C 11/16 (2006.01); H01L 43/12 (2006.01); H01L 27/22 (2006.01); H01L 43/08 (2006.01); H01L 43/10 (2006.01);
U.S. Cl.
CPC ...
H01F 10/329 (2013.01); G11C 11/161 (2013.01); H01F 10/3254 (2013.01); H01F 10/3286 (2013.01); H01F 41/302 (2013.01); H01L 27/228 (2013.01); H01L 43/08 (2013.01); H01L 43/12 (2013.01); H01F 10/3272 (2013.01); H01L 43/10 (2013.01);
Abstract

A perpendicular spin orbit torque (SOT) memory device includes an electrode having a spin orbit torque material, where the SOT material includes iridium and manganese and a perpendicular magnetic tunnel junction (pMTJ) device on a portion of the electrode. The pMTJ device includes a free magnet structure electrode, a fixed layer and a tunnel barrier between the free layer and the fixed layer and a SAF structure above the fixed layer. The Ir—Mn SOT material and the free magnet have an in-plane magnetic exchange bias.


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