The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 24, 2020

Filed:

Jun. 03, 2019
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Kaan Oguz, Beaverton, OR (US);

Kevin P. O'Brien, Portland, OR (US);

Christopher J. Wiegand, Portland, OR (US);

Md Tofizur Rahman, Portland, OR (US);

Brian S. Doyle, Portland, OR (US);

Mark L. Doczy, Portland, OR (US);

Oleg Golonzka, Beaverton, OR (US);

Tahir Ghani, Portland, OR (US);

Justin S. Brockman, Portland, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 43/08 (2006.01); H01L 43/12 (2006.01); H01L 43/10 (2006.01); H01F 10/32 (2006.01); H01F 41/30 (2006.01); G11C 11/16 (2006.01);
U.S. Cl.
CPC ...
H01L 43/12 (2013.01); G11C 11/161 (2013.01); H01F 10/3272 (2013.01); H01F 10/3286 (2013.01); H01F 41/307 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01);
Abstract

MTJ material stacks, pSTTM devices employing such stacks, and computing platforms employing such pSTTM devices. In some embodiments, perpendicular MTJ material stacks include a multi-layered filter stack disposed between a fixed magnetic layer and an antiferromagnetic layer or synthetic antiferromagnetic (SAF) stack. In some embodiments, non-magnetic layers of the filter stack include at least one of Ta, Mo, Nb, W, or Hf. These transition metals may be in pure form or alloyed with other constituents.


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