The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 02, 2019
Filed:
Sep. 25, 2015
Intel Corporation, Santa Clara, CA (US);
Kaan Oguz, Beaverton, OR (US);
Kevin P. O'Brien, Portland, OR (US);
Christopher J. Wiegand, Portland, OR (US);
MD Tofizur Rahman, Portland, OR (US);
Brian S. Doyle, Portland, OR (US);
Mark L. Doczy, Portland, OR (US);
Oleg Golonzka, Beaverton, OR (US);
Tahir Ghani, Portland, OR (US);
Justin S. Brockman, Portland, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
MTJ material stacks, pSTTM devices employing such stacks, and computing platforms employing such pSTTM devices. In some embodiments, perpendicular MTJ material stacks include one or more electrode interface material layers disposed between a an electrode metal, such as TiN, and a seed layer of an antiferromagnetic layer or synthetic antiferromagnetic (SAF) stack. The electrode interface material layers may include either or both of a Ta material layer or CoFeB material layer. In some Ta embodiments, a Ru material layer may be deposited on a TiN electrode surface, followed by the Ta material layer. In some CoFeB embodiments, a CoFeB material layer may be deposited directly on a TiN electrode surface, or a Ta material layer may be deposited on the TiN electrode surface, followed by the CoFeB material layer.