The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2020
Filed:
Dec. 30, 2016
Intel Corporation, Santa Clara, CA (US);
MD Tofizur Rahman, Portland, OR (US);
Christopher J. Wiegand, Portland, OR (US);
Kaan Oguz, Beaverton, OR (US);
Daniel G. Ouellette, Portland, OR (US);
Brian Maertz, Santa Barbara, CA (US);
Kevin P. O'Brien, Portland, OR (US);
Mark L. Doczy, Beaverton, OR (US);
Brian S. Doyle, Portland, OR (US);
Oleg Golonzka, Beaverton, OR (US);
Tahir Ghani, Portland, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
A material layer stack for a pSTTM device includes a fixed magnetic layer, a tunnel barrier disposed above the fixed magnetic layer and a free layer disposed on the tunnel barrier. The free layer further includes a stack of bilayers where an uppermost bilayer is capped by a magnetic layer including iron and where each of the bilayers in the free layer includes a non-magnetic layer such as Tungsten, Molybdenum disposed on the magnetic layer. In an embodiment, the non-magnetic layers have a combined thickness that is less than 15% of a combined thickness of the magnetic layers in the stack of bilayers. A stack of bilayers including non-magnetic layers in the free layer can reduce the saturation magnetization of the material layer stack for the pSTTM device and subsequently increase the perpendicular magnetic anisotropy.