The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 18, 2022

Filed:

Jun. 19, 2018
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Tanay Gosavi, Hillsboro, OR (US);

Sasikanth Manipatruni, Portland, OR (US);

Kaan Oguz, Portland, OR (US);

Noriyuki Sato, Hillsboro, OR (US);

Kevin O'Brien, Portland, OR (US);

Benjamin Buford, Hillsboro, OR (US);

Christopher Wiegand, Portland, OR (US);

Angeline Smith, Hillsboro, OR (US);

Tofizur Rahman, Portland, OR (US);

Ian Young, Portland, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 43/04 (2006.01); H01L 43/10 (2006.01); H01L 43/08 (2006.01); G11C 11/16 (2006.01); G11C 11/18 (2006.01); H01F 10/32 (2006.01); B82Y 25/00 (2011.01);
U.S. Cl.
CPC ...
H01L 43/04 (2013.01); G11C 11/161 (2013.01); G11C 11/18 (2013.01); H01F 10/3286 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01); B82Y 25/00 (2013.01);
Abstract

An apparatus is provided which comprises: a magnetic junction including: a first structure comprising a magnet with an unfixed perpendicular magnetic anisotropy (PMA) relative to an x-y plane of a device; a second structure comprising one of a dielectric or metal; a third structure comprising a magnet with fixed PMA, wherein the third structure has an anisotropy axis perpendicular to the plane of the device, and wherein the third structure is adjacent to the second structure such that the second structure is between the first and third structures; a fourth structure comprising an antiferromagnetic (AFM) material, the fourth structure adjacent to the third structure; a fifth structure comprising a magnet with PMA, the fifth structure adjacent to the fourth structure; and an interconnect adjacent to the first structure, the interconnect comprising spin orbit material.


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