The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 21, 2022
Filed:
Jun. 28, 2018
Intel Corporation, Santa Clara, CA (US);
Noriyuki Sato, Hillsboro, OR (US);
Angeline Smith, Hillsboro, OR (US);
Tanay Gosavi, Hillsboro, OR (US);
Sasikanth Manipatruni, Portland, OR (US);
Kaan Oguz, Portland, OR (US);
Kevin O'Brien, Portland, OR (US);
Tofizur Rahman, Portland, OR (US);
Gary Allen, Portland, OR (US);
Atm G. Sarwar, North Plains, OR (US);
Ian Young, Portland, OR (US);
Hui Jae Yoo, Hillsboro, OR (US);
Christopher Wiegand, Portland, OR (US);
Benjamin Buford, Hillsboro, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
A spin orbit torque (SOT) memory device includes a magnetic tunnel junction (MTJ) device with one end coupled with a first electrode and an opposite end coupled with a second electrode including a spin orbit torque material. In an embodiment, a second electrode is coupled with the free magnet and coupled between a pair of interconnect line segments. The second electrode and the pair of interconnect line segments include a spin orbit torque material. The second electrode has a conductive path cross-section that is smaller than a cross section of the conductive path in at least one of the interconnect line segments.