The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 27, 2012
Filed:
Feb. 12, 2010
Adrien R. Lavoie, Beaverton, OR (US);
Valery M. Dubin, Portland, OR (US);
John J. Plombon, Portland, OR (US);
Juan E. Dominguez, Hillsboro, OR (US);
Harsono S. Simka, Saratoga, CA (US);
Joseph H. Han, San Jose, CA (US);
Mark Doczy, Beaverton, OR (US);
Adrien R. Lavoie, Beaverton, OR (US);
Valery M. Dubin, Portland, OR (US);
John J. Plombon, Portland, OR (US);
Juan E. Dominguez, Hillsboro, OR (US);
Harsono S. Simka, Saratoga, CA (US);
Joseph H. Han, San Jose, CA (US);
Mark Doczy, Beaverton, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Described herein are metal gate electrode stacks including a low resistance metal cap in contact with a metal carbonitride diffusion barrier layer, wherein the metal carbonitride diffusion barrier layer is tuned to a particular work function to also serve as a work function metal for a pMOS transistor. In an embodiment, the work function-tuned metal carbonitride diffusion barrier prohibits a low resistance metal cap layer of the gate electrode stack from migrating into the MOS junction. In a further embodiment of the present invention, the work function of the metal carbonitride barrier film is modulated to be p-type with a pre-selected work function by altering a nitrogen concentration in the film.