The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2026
Filed:
Feb. 08, 2022
Intel Corporation, Santa Clara, CA (US);
Arnab Sen Gupta, Beaverton, OR (US);
Kaan Oguz, Portland, OR (US);
Chia-Ching Lin, Portland, OR (US);
I-Cheng Tung, Hillsboro, OR (US);
Sudarat Lee, Hillsboro, OR (US);
Sou-Chi Chang, Portland, OR (US);
Matthew V. Metz, Portland, OR (US);
Scott B. Clendenning, Portland, OR (US);
Uygar E. Avci, Portland, OR (US);
Ian A. Young, Portland, OR (US);
Jason C. Retasket, Beaverton, OR (US);
Edward O. Johnson, Jr., Saint Helens, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Described herein are capacitor devices formed using perovskite insulators. In one example, a perovskite templating material is formed over an electrode, and a perovskite insulator layer is grown over the templating material. The templating material improves the crystal structure and electrical properties in the perovskite insulator layer. One or both electrodes may be ruthenium. In another example, a perovskite insulator layer is formed between two layers of indium tin oxide (ITO), with the ITO layers forming the capacitor electrodes.