Edward O Johnson, Jr

Title: Edward O Johnson, Jr: Innovator in Transistor Technology

Introduction

Edward O Johnson, Jr. is a notable inventor based in Saint Helens, OR (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of transistor devices. His innovative work focuses on utilizing high-k perovskite gate dielectrics to enhance transistor performance.

Latest Patents

Edward O Johnson, Jr. holds 1 patent for his invention titled "Transistor devices with high-k perovskite gate dielectrics." This patent describes transistor devices formed using perovskite gate dielectrics. In one example, a transistor includes a high-k perovskite dielectric material situated between a gate electrode and a thin film semiconductor channel. In another example, a four-terminal transistor features a semiconductor channel, a gate stack that includes a perovskite dielectric layer on one side of the channel, and a body electrode on the opposite side. The body electrode is designed to adjust the threshold voltage of the transistor.

Career Highlights

Edward O Johnson, Jr. is currently employed at Intel Corporation, a leading technology company known for its advancements in semiconductor manufacturing. His work at Intel has allowed him to contribute to cutting-edge research and development in the field of electronics.

Collaborations

One of his notable collaborators is Abhishek A Sharma, with whom he has worked on various projects related to transistor technology.

Conclusion

Edward O Johnson, Jr. is a prominent figure in the field of transistor innovation, with a focus on high-k perovskite dielectrics. His contributions continue to influence the development of advanced semiconductor devices.