The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2025
Filed:
Sep. 25, 2020
Applicant:
Intel Corporation, Santa Clara, CA (US);
Inventors:
Thomas Sounart, Chandler, AZ (US);
Kaan Oguz, Portland, OR (US);
Neelam Prabhu Gaunkar, Chandler, AZ (US);
Aleksandar Aleksov, Chandler, AZ (US);
Henning Braunisch, Phoenix, AZ (US);
I-Cheng Tung, Hillsboro, OR (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 28/65 (2013.01); H01L 28/55 (2013.01); H01L 28/75 (2013.01);
Abstract
Low leakage thin film capacitors for decoupling, power delivery, integrated circuits, related systems, and methods of fabrication are disclosed. Such thin film capacitors include a titanium dioxide dielectric and one or more noble metal oxide electrodes. Such thin film capacitors are suitable for high voltage applications and provide low current density leakage.