The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 2025
Filed:
Sep. 23, 2021
Intel Corporation, Santa Clara, CA (US);
Kaan Oguz, Portland, OR (US);
I-Cheng Tung, Hillsboro, OR (US);
Chia-Ching Lin, Portland, OR (US);
Sou-Chi Chang, Portland, OR (US);
Matthew V. Metz, Portland, OR (US);
Uygar E. Avci, Portland, OR (US);
Arnab Sen Gupta, Hillsboro, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Embodiments described herein may be related to apparatuses, processes, and techniques related to increasing the capacitance density of MIM capacitors on dies or within packages. In particular, a MIM stack is disclosed that has multiple insulator layers between the metal, in order to increase the dielectric constant of the MIM stack. In particular, the first dielectric layer may include strontium, titanium, and oxygen and may be physically coupled with a second dielectric layer that may include barium, strontium, titanium, and oxygen. Other embodiments may be described and/or claimed.