The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2026
Filed:
Sep. 30, 2022
Intel Corporation, Santa Clara, CA (US);
Nazila Haratipour, Portland, OR (US);
Christopher Neumann, Portland, OR (US);
Brian Doyle, Portland, OR (US);
Sou-Chi Chang, Portland, OR (US);
Bernal Granados Alpizar, Beaverton, OR (US);
Sarah Atanasov, Beaverton, OR (US);
Matthew Metz, Portland, OR (US);
Uygar Avci, Portland, OR (US);
Jack Kavalieros, Portland, OR (US);
Shriram Shivaraman, Hillsboro, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
A memory device includes a group of ferroelectric capacitors with a shared plate that extends through the ferroelectric capacitors, has a greatest width between ferroelectric capacitors, and is coupled to an access transistor. The shared plate may be vertically between ferroelectric layers of the ferroelectric capacitors at the shared plate's greatest width. The memory device may include an integrated circuit die and be coupled to a power supply. Forming a group of ferroelectric capacitors includes forming an opening through an alternating stack of insulators and conductive plates, selectively forming ferroelectric material on the conductive plates rather than the insulators, and forming a shared plate in the opening over the ferroelectric material.