IDiyas

For the Inventor, By the Inventor

Beaverton, OR, United States of America

Sarah Atanasov

USPTO Granted Patents = 11 

Average Co-Inventor Count = 9.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:

goldMedal11 out of 54,664 
 
Intel Corporation
 patents

Years Active: 2021-2025

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11 patents (USPTO):Explore Patents
1. 12376342 - Passivation layers for thin film transistors (2025-07-29),
2. 12150297 - Thin film transistors having a backside channel contact for high density memory (2024-11-19),
3. 12148734 - Transistors, memory cells, and arrangements thereof (2024-11-19),
4. 12080781 - Fabrication of thin film fin transistor structure (2024-09-03),
5. 11955560 - Passivation layers for thin film transistors and methods of fabrication (2024-04-09),
6. 11812599 - Compute near memory with backend memory (2023-11-07),
7. 11699747 - Quantum dot devices with multiple layers of gate metal (2023-07-11),
8. 11682701 - Quantum dot devices (2023-06-20),
9. 11664305 - Staggered lines for interconnect performance improvement and processes for forming such (2023-05-30),
10. 11251186 - Compute near memory with backend memory (2022-02-15),
11. 11189790 - Spacer-based patterning for tight-pitch and low-variability random access memory (RAM) bit cells and the resulting structures (2021-11-30),

Title: The Innovative Mind of Sarah Atanasov

Introduction

Sarah Atanasov, an accomplished inventor based in Beaverton, Oregon, is making significant contributions to the field of integrated circuit technology. With a remarkable portfolio that includes 10 patents, her innovations are paving the way for advancements in high-density memory devices.

Latest Patents

Among her latest patents, Sarah has developed a breakthrough in thin film transistors with a backside channel contact for high-density memory applications. This innovative integrated circuit (IC) structure includes a memory cell featuring a bitline (BL) extending in one direction, with a channel that runs diagonally across it. A wordline (WL) intersects with the channel to control the current flow, showcasing a unique method of enhancing memory device efficiency.

Additionally, she has contributed to the field with patents that describe various transistors and memory cells arranged in a hexagonal packing. These arrangements aim to improve the functionality and integration of integrated circuits, highlighting her commitment to advancing technology in memory devices.

Career Highlights

Sarah currently works with Intel Corporation, where she continues to push the boundaries of what's possible in semiconductor technology. Her expertise in designing innovative memory cell structures and transistors reflects her deep understanding of complex electronic systems, solidifying her reputation as a leading figure in her field.

Collaborations

Throughout her career, Sarah Atanasov has collaborated with esteemed colleagues such as Noriyuki Sato and Abhishek A. Sharma. These partnerships have allowed her to combine her unique talents with others in the industry, resulting in potent innovations and advancements in integrated circuit technology.

Conclusion

In conclusion, Sarah Atanasov stands out as a pivotal inventor whose work is synonymous with innovation in high-density memory devices. Her patents and collaborative efforts underscore her commitment to technological advancement and the impactful role she plays in the field of integrated circuits. The future holds great promise as she continues to innovate at Intel Corporation and beyond.

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