The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 11, 2023

Filed:

Mar. 26, 2019
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Hubert C. George, Portland, OR (US);

Sarah Atanasov, Beaverton, OR (US);

Ravi Pillarisetty, Portland, OR (US);

Lester Lampert, Portland, OR (US);

James S. Clarke, Portland, OR (US);

Nicole K. Thomas, Portland, OR (US);

Roman Caudillo, Portland, OR (US);

Kanwaljit Singh, Rotterdam, NL;

David J. Michalak, Portland, OR (US);

Jeanette M. Roberts, North Plains, OR (US);

Stephanie A. Bojarski, Beaverton, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); G06N 10/00 (2022.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/40 (2006.01); H01L 29/76 (2006.01); B82Y 10/00 (2011.01); H01L 29/775 (2006.01);
U.S. Cl.
CPC ...
H01L 29/775 (2013.01); B82Y 10/00 (2013.01); G06N 10/00 (2019.01); H01L 29/401 (2013.01); H01L 29/4236 (2013.01); H01L 29/66439 (2013.01); H01L 29/66977 (2013.01); H01L 29/7613 (2013.01); H01L 29/7831 (2013.01);
Abstract

Disclosed herein are quantum dot devices with multiple layers of gate metal, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include: a quantum well stack; an insulating material above the quantum well stack, wherein the insulating material includes a trench; and a gate on the insulating material and extending into the trench, wherein the gate includes a first gate metal in the trench and a second gate metal above the first gate metal.


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