The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2025
Filed:
Dec. 21, 2020
Intel Corporation, Santa Clara, CA (US);
Carl Naylor, Portland, OR (US);
Chelsey Dorow, Portland, OR (US);
Kevin O'Brien, Portland, OR (US);
Sudarat Lee, Hillsboro, OR (US);
Kirby Maxey, Hillsboro, OR (US);
Ashish Verma Penumatcha, Beaverton, OR (US);
Tanay Gosavi, Portland, OR (US);
Patrick Theofanis, Portland, OR (US);
Chia-Ching Lin, Portland, OR (US);
Uygar Avci, Portland, OR (US);
Matthew Metz, Portland, OR (US);
Shriram Shivaraman, Hillsboro, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Transistor structures with monocrystalline metal chalcogenide channel materials are formed from a plurality of template regions patterned over a substrate. A crystal of metal chalcogenide may be preferentially grown from a template region and the metal chalcogenide crystals then patterned into the channel region of a transistor. The template regions may be formed by nanometer-dimensioned patterning of a metal precursor, a growth promoter, a growth inhibitor, or a defected region. A metal precursor may be a metal oxide suitable, which is chalcogenated when exposed to a chalcogen precursor at elevated temperature, for example in a chemical vapor deposition process.