The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 24, 2025

Filed:

May. 06, 2022
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Elijah V. Karpov, Portland, OR (US);

Matthew Metz, Portland, OR (US);

Robert Willoner, Palo Alto, CA (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76877 (2013.01); H01J 37/32009 (2013.01); H01J 2237/08 (2013.01); H01J 2237/332 (2013.01);
Abstract

The present disclosure is directed to semiconductor deposition tools having a specimen support, at least one ion gun directed to a specimen positioned on the specimen support, at least one source, and at least one electron beam gun directed at the source. In an aspect, the electron beam guns, sources, and ion beam guns are positioned below the specimen support and specimen positioned thereon, which has its top surface facing downward. In another aspect, the method includes activating the electron beam gun and depositing the source material in a trench in the specimen and on surfaces adjacent to the opening of the trench and activating the ion beam gun to remove portions of the source material deposited on the surfaces adjacent to the opening of the trench.


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