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For the Inventor, By the Inventor

Santa Clara, CA, United States of America

Elijah V Karpov

This inventor holds 98 USPTO granted patents and 27 published patent applications and 11 EPO patents, primarily in Integrated Circuit Design (CPC class H01L45-1233). Top assignees: Intel Corporation, Micron Technology Incorporated. Active years: 2013-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Elijah V Karpov. Retrieved from https://idiyas.com/inventor/elijah-v-karpov

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 98 

% Patents Active = 75.5

 

Average Co-Inventor Count = 5.1

ph-index = 9

Forward Citations = 324(Granted Patents)

Forward Citations (Not Self Cited) = 287(Dec 10, 2025)


Inventors with similar research interests:

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Location History:

  • Santa Clara, CA (US) (2013 - 2020)
  • Portland, OR (US) (2014 - 2024)

Company Filing History:

goldMedal95 out of 56,322 
 
Intel Corporation
 patents
silverMedal3 out of 39,222 
 
Micron Technology Incorporated
 patents

Years Active: 2013-2026

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Areas of Expertise:
Ferroelectric Transistors
Memory Cells
Integrated Circuits
Interconnect Structures
Thin Film Technology
ESD Protection
High Density Memory
CMOS Logic
RRAM Devices
Metallization Stacks
Trench Contacts
3D Oscillator Structures
98 patents (USPTO):Explore Patents
1. 12720859 - Fabrication of reconfigurable architectures using ferroelectrics (2026-08-25),
2. 12622258 - Self-aligned staggered integrated circuit interconnect features (2026-05-05),
3. 12581927 - Contact over active gate structures with conductive trench contact taps for advanced integrated circuit structure fabrication (2026-03-17),
4. 12543349 - Transistors with ferroelectric gates (2026-02-03),
5. 12500162 - Staggered vertically spaced integrated circuit line metallization with differential vias and metal-selective deposition (2025-12-16),
6. 12482744 - Subtractively patterned interconnect structures for integrated circuits (2025-11-25),
7. 12400913 - Contact over active gate structures with conductive trench contact taps for advanced integrated circuit structure fabrication (2025-08-26),
8. 12341092 - Planar slab vias for integrated circuit interconnects (2025-06-24),
9. 12341065 - Deposition tool and method for filling deep trenches (2025-06-24),
10. 12328946 - ESD protection decoupled from diffusion (2025-06-10),
11. 12261114 - Metallization stacks with self-aligned staggered metal lines (2025-03-25),
12. 12058847 - Monolithic memory stack (2024-08-06),
13. 12027458 - Subtractively patterned interconnect structures for integrated circuits (2024-07-02),
14. 11985909 - Fabrication of stackable embedded eDRAM using a binary alloy based on antimony (2024-05-14),
15. 11895846 - Double-gated ferroelectric field-effect transistor (2024-02-06),

Title: **Elijah V. Karpov: Innovator in Integrated Circuit Technologies**

Introduction

Elijah V. Karpov is a prolific inventor based in Santa Clara, CA, recognized for his significant contributions to the field of integrated circuits. With an impressive portfolio of 85 patents, Karpov has consistently pushed the boundaries of innovation, offering groundbreaking solutions in advanced semiconductor technology.

Latest Patents

Among his latest inventions, Karpov's patents cover cutting-edge technologies such as subtractively patterned interconnect structures for integrated circuits. This technology includes intricate features designed to enhance performance and reduce misregistration through multiple patterning of cap materials. His innovations integrate subtractively patterned features with air gap isolation structures, focusing on efficiency and reliability. Another notable patent involves the fabrication of stackable embedded DRAM using a binary alloy based on antimony, designed to optimize memory bitcells within eDRAM memory devices. This invention showcases the integration of phase-changing materials to advance storage capabilities in modern computing.

Career Highlights

Throughout his career, Karpov has made substantial contributions while working with industry leaders such as Intel Corporation and Micron Technology Incorporated. His expertise in the semiconductor field has led to numerous advancements that have supported the growth of high-performance integrated circuits and memory technologies.

Collaborations

Karpov has collaborated with esteemed colleagues, including Brian S. Doyle and Ravi Pillarisetty, to further innovate and develop technologies that meet the ever-evolving demands of the industry. Their teamwork has enhanced the capabilities of semiconductor structures, cementing Karpov's reputation as a thought leader in his area of expertise.

Conclusion

Elijah V. Karpov's impressive body of work and his ability to innovate within the semiconductor industry highlight his significant impact on integrated circuit technology. As he continues to develop pioneering solutions, his patents remain a testament to the potential of innovation in shaping the future of electronics.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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