The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2024
Filed:
Jun. 10, 2019
Applicant:
Intel Corporation, Santa Clara, CA (US);
Inventors:
Elijah Karpov, Portland, OR (US);
Mauro Kobrinsky, Portland, OR (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 13/00 (2006.01); H10B 63/00 (2023.01); H10N 70/00 (2023.01); H10N 70/20 (2023.01);
U.S. Cl.
CPC ...
H10N 70/231 (2023.02); G11C 13/0004 (2013.01); G11C 13/0069 (2013.01); G11C 13/0097 (2013.01); H10B 63/20 (2023.02); H10B 63/24 (2023.02); H10B 63/30 (2023.02); H10N 70/826 (2023.02); H10N 70/841 (2023.02); H10N 70/8828 (2023.02); G11C 13/004 (2013.01); G11C 2013/0092 (2013.01); G11C 2213/52 (2013.01); G11C 2213/72 (2013.01); G11C 2213/79 (2013.01);
Abstract
Embodiments disclosed herein include memory bitcells and methods of forming such memory bitcells. In an embodiment, the memory bitcell is part of an embedded DRAM (eDRAM) memory device. In an embodiment, the memory bitcell comprises a substrate and a storage element embedded in the substrate. In an embodiment, the storage element comprises a phase changing material that comprises a binary alloy. In an embodiment, the memory bitcell further comprises a first electrode over a first surface of the storage element, and a second electrode over a second surface of the storage element.