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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12543349 B1

PDFFull Text
Date of Patent:
Feb. 03, 2026

Filed:

Feb. 27, 2023

Transistors with ferroelectric gates

Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Abhishek A. Sharma, Portland, OR (US);

Ravi Pillarisetty, Portland, OR (US);

Brian S. Doyle, Portland, OR (US);

Elijah V. Karpov, Portland, OR (US);

Prashant Majhi, San Jose, CA (US);

Gilbert W. Dewey, Beaverton, OR (US);

Benjamin Chu-Kung, Portland, OR (US);

Van H. Le, Beaverton, OR (US);

Jack T. Kavalieros, Portland, OR (US);

Tahir Ghani, Portland, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:

Akona IP PC

Primary Examiner:

Matthew E Warren

Int. Cl.
CPC ...
H10D 30/69 (2025.01); H10B 51/00 (2023.01); H10B 51/20 (2023.01); H10B 51/30 (2023.01); H10B 80/00 (2023.01); H10B 99/00 (2023.01); H10D 30/01 (2025.01); H10D 30/62 (2025.01); H10D 30/67 (2025.01); H10D 64/68 (2025.01);
U.S. Cl.
CPC ...
H10D 30/701 (2025.01); H10B 51/00 (2023.02); H10B 51/20 (2023.02); H10B 51/30 (2023.02); H10B 80/00 (2023.02); H10B 99/22 (2023.02); H10D 30/0415 (2025.01); H10D 64/685 (2025.01); H10D 64/689 (2025.01); H10D 30/62 (2025.01); H10D 30/6739 (2025.01);
Abstract

Disclosed herein are transistors with ferroelectric gates, and related methods and devices. For example, in some embodiments, a transistor may include a channel material, and a gate stack, and the gate stack may include a gate electrode material and a ferroelectric material between the gate electrode material and the channel material.

Find Patent Forward Citations

Sharma, Abhishek. (2026). Transistors with ferroelectric gates (U.S. Patent No. 12543349). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12543349

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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