Hillsboro, OR, United States of America

Benjamin Chu-Kung

This inventor holds 198 USPTO granted patents and 21 published patent applications and 20 EPO patents, primarily in Thin Film Transistors (CPC class H01L29-785). Top assignees: Intel Corporation, Google Inc., Intel Corporatiion. Active years: 2010-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Benjamin Chu-Kung. Retrieved from https://idiyas.com/inventor/benjamin-chu-kung

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 198 

% Patents Active = 64.6

 

Average Co-Inventor Count = 7.8

ph-index = 12

Forward Citations = 676(Granted Patents)

Forward Citations (Not Self Cited) = 556(Dec 10, 2025)


Inventors with similar research interests:

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Location History:

  • Boise, ID (US) (2021 - 2023)
  • Hillsboro, OR (US) (2010 - 2024)
  • Portland, OR (US) (2015 - 2024)

Company Filing History:


Years Active: 2010-2026

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Areas of Expertise:
Thin Film Transistors
Germanium NMOS
Ferroelectric Gates
Vertical Architecture
Charge Trap Layer
Epitaxial Layers
Tunneling Field Effect
Contact Stacks
Memory Cells
Nanowire Transistors
Self-Aligned Contacts
Source/Drain Structures
198 patents (USPTO):Explore Patents

Title: Benjamin Chu-Kung: Innovator in Advanced Semiconductor Technology

Introduction:

Benjamin Chu-Kung is an accomplished inventor and engineer based in Hillsboro, Oregon, who has made significant contributions to the field of advanced semiconductor technology. With an impressive portfolio of 187 patents and a focus on developing thin-film transistors with low contact resistance, his work has greatly influenced the performance and efficiency of modern electronic devices. This article will delve into Chu-Kung's latest patents, career highlights, collaborations, and his enduring impact on the semiconductor industry.

Latest Patents:

Among Chu-Kung's recent achievements is his work on thin-film transistors (TFTs) with low contact resistance. These techniques involve intentionally thinning the source and drain (S/D) regions of the TFT layer, resulting in enhanced device performance. By reducing the thickness of these regions to 3-10 nm, Chu-Kung successfully increases the effective dopant concentration within the thinned S/D regions, leading to a reduction in contact resistance. This innovation has the potential to revolutionize the design and manufacturing of TFT-based devices.

Another groundbreaking patent developed by Chu-Kung is the non-selective epitaxial source/drain deposition technique for germanium NMOS transistors. This process addresses the challenge of n-type dopant diffusion from the source and drain regions into the adjacent channel regions during fabrication. Chu-Kung's approach utilizes low-temperature, non-selective deposition of n-type doped material, limiting dopant diffusion and thereby improving the performance and reliability of germanium-based devices.

Career Highlights:

Chu-Kung has made significant contributions throughout his career, with many notable achievements during his tenure at Intel Corporation. His expertise in semiconductor technology has helped drive advancements in component miniaturization, power efficiency, and performance. His research and inventions have been instrumental in shaping the evolution of modern computing devices.

Collaborations:

Throughout his career, Chu-Kung has collaborated with esteemed colleagues, including Jack T Kavalieros and Marko Radosavljevic. These talented individuals, known for their expertise in semiconductor technology, have likely influenced and enhanced the outcomes of Chu-Kung's projects. Collaborations within the industry are crucial for driving innovation and pushing the boundaries of technological advancements.

Conclusion:

Benjamin Chu-Kung's relentless pursuit of innovative semiconductor solutions has solidified his position as a leading inventor in the field. With his vast patent portfolio and impactful contributions to thin-film transistor design and germanium NMOS technology, Chu-Kung continues to shape the landscape of modern electronics. His work serves as a testament to the endless possibilities of innovation in the semiconductor industry, and his contributions will undoubtedly inspire future advancements for years to come.

Disclaimer: The information mentioned in this article has been collated from publicly available sources and is solely intended for informational purposes.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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