The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 12, 2023
Filed:
Jun. 22, 2018
Intel Corporation, Santa Clara, CA (US);
Van H. Le, Portland, OR (US);
Seung Hoon Sung, Portland, OR (US);
Benjamin Chu-Kung, Portland, OR (US);
Miriam Reshotko, Portland, OR (US);
Matthew Metz, Portland, OR (US);
Yih Wang, Portland, OR (US);
Gilbert Dewey, Beaverton, OR (US);
Jack Kavalieros, Portland, OR (US);
Tahir Ghani, Portland, OR (US);
Nazila Haratipour, Hillsboro, OR (US);
Abhishek Sharma, Hillsboro, OR (US);
Shriram Shivaraman, Hillsboro, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Embodiments herein describe techniques for a semiconductor device including a transistor. The transistor includes a first metal contact as a source electrode, a second metal contact as a drain electrode, a channel area between the source electrode and the drain electrode, and a third metal contact aligned with the channel area as a gate electrode. The first metal contact may be located in a first metal layer along a first direction. The second metal contact may be located in a second metal layer along the first direction, in parallel with the first metal contact. The third metal contact may be located in a third metal layer along a second direction substantially orthogonal to the first direction. The third metal layer is between the first metal layer and the second metal layer. Other embodiments may be described and/or claimed.