The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2023
Filed:
Jan. 20, 2022
Intel Corporation, Santa Clara, CA (US);
Gilbert Dewey, Beaverton, OR (US);
Aaron Lilak, Beaverton, OR (US);
Van H. Le, Portland, OR (US);
Abhishek A. Sharma, Portland, OR (US);
Tahir Ghani, Portland, OR (US);
Willy Rachmady, Beaverton, OR (US);
Rishabh Mehandru, Portland, OR (US);
Nazila Haratipour, Portland, OR (US);
Jack T. Kavalieros, Portland, OR (US);
Benjamin Chu-Kung, Boise, ID (US);
Seung Hoon Sung, Portland, OR (US);
Shriram Shivaraman, Hillsboro, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Thin film transistors having U-shaped features are described. In an example, integrated circuit structure including a gate electrode above a substrate, the gate electrode having a trench therein. A channel material layer is over the gate electrode and in the trench, the channel material layer conformal with the trench. A first source or drain contact is coupled to the channel material layer at a first end of the channel material layer outside of the trench. A second source or drain contact is coupled to the channel material layer at a second end of the channel material layer outside of the trench.