The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2025
Filed:
Jun. 25, 2020
Intel Corporation, Santa Clara, CA (US);
Koustav Ganguly, Beaverton, OR (US);
Ryan Keech, Portland, OR (US);
Subrina Rafique, Hillsboro, OR (US);
Glenn A. Glass, Portland, OR (US);
Anand S. Murthy, Portland, OR (US);
Ehren Mannebach, Beaverton, OR (US);
Mauro Kobrinsky, Portland, OR (US);
Gilbert Dewey, Beaverton, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Embodiments disclosed herein include transistor devices and methods of making such devices. In an embodiment, the transistor device comprises a stack of semiconductor channels with a first source/drain region on a first end of the semiconductor channels and a second source/drain region on a second end of the semiconductor channels. In an embodiment, the first source/drain region and the second source/drain region have a top surface and a bottom surface. In an embodiment, the transistor device further comprises a first source/drain contact electrically coupled to the top surface of the first source/drain region, and a second source/drain contact electrically coupled to the bottom surface of the second source/drain region. In an embodiment, the second source/drain contact is separated from the second source/drain region by an interfacial layer.