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For the Inventor, By the Inventor

Beaverton, OR, United States of America

Ehren Mannebach

USPTO Granted Patents = 45 

 

Average Co-Inventor Count = 7.4

ph-index = 3

Forward Citations = 23(Granted Patents)


Location History:

  • Tigard, OR (US) (2022 - 2024)
  • Beaverton, OR (US) (2022 - 2024)

Company Filing History:

goldMedal45 out of 54,750 
 
Intel Corporation
 patents

Years Active: 2022-2025

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Areas of Expertise:
Transistor Devices
Stacked Transistors
Gate-All-Around Structures
Epitaxial Layers
Vertical Memory Cells
Interconnect Techniques
Oxide Volume Formation
Capacitance Reduction
Three Dimensional Integrated Circuits
Nanowire Transistors
Dielectric Isolation
Air Gap Techniques
45 patents (USPTO):Explore Patents
1. 12501684 - Integrated circuit structures with backside self-aligned penetrating conductive source or drain contact (2025-12-16),
2. 12342574 - Contact resistance reduction in transistor devices with metallization on both sides (2025-06-24),
3. 12255137 - Sideways vias in isolation areas to contact interior layers in stacked devices (2025-03-18),
4. 12230635 - Gate-all-around integrated circuit structures having depopulated channel structures using selective bottom-up approach (2025-02-18),
5. 12224202 - Forming an oxide volume within a fin (2025-02-11),
6. 12148806 - Stacked source-drain-gate connection and process for forming such (2024-11-19),
7. 12107085 - Interconnect techniques for electrically connecting source/drain regions of stacked transistors (2024-10-01),
8. 12080605 - Backside contacts for semiconductor devices (2024-09-03),
9. 12020929 - Epitaxial layer with substantially parallel sides (2024-06-25),
10. 11996411 - Stacked forksheet transistors (2024-05-28),
11. 11996408 - Leave-behind protective layer having secondary purpose (2024-05-28),
12. 11942416 - Sideways vias in isolation areas to contact interior layers in stacked devices (2024-03-26),
13. 11916118 - Stacked source-drain-gate connection and process for forming such (2024-02-27),
14. 11894372 - Stacked trigate transistors with dielectric isolation and process for forming such (2024-02-06),
15. 11862636 - Gate-all-around integrated circuit structures having depopulated channel structures using selective bottom-up approach (2024-01-02),

Title: Ehren Mannebach: Innovator in Integrated Circuit Technologies

Introduction

Ehren Mannebach, based in Beaverton, Oregon, is a prominent inventor recognized for his contributions to the field of integrated circuits. With an impressive portfolio of 42 patents, he has made significant advancements that influence current and future semiconductor technologies.

Latest Patents

Mannebach's latest patents detail innovative approaches to developing gate-all-around integrated circuit structures. One patent describes advanced structures that incorporate depopulated channel structures and methods for fabricating these circuits using a selective bottom-up approach. This includes a design that features a vertical arrangement of nanowires placed above a substrate, with active and oxide nanowires interacting with gate stacks.

Another noteworthy patent addresses the formation of oxide volumes within fins of semiconductor materials, such as silicon. Through the application of catalytic oxidants or advanced implant techniques, these processes serve as foundational technologies for manufacturing various types of transistors, including three-dimensional (3-D) monolithic stacked transistors.

Career Highlights

Ehren Mannebach's career has predominantly unfolded at Intel Corporation, one of the leading technology companies globally. His expertise in semiconductor design and fabrication has played a crucial role in advancing the company's innovations in integrated circuit technology, ensuring high-performance solutions for the electronics industry.

Collaborations

Throughout his career, he has collaborated with talented professionals including Willy Rachmady and Anh Phan. Together, their collective knowledge and expertise have fostered an environment of innovation, allowing for groundbreaking developments in integrated circuit technologies.

Conclusion

Ehren Mannebach stands out as a key inventor in the technology sector, particularly in integrated circuits, with a wealth of patents that underscore his creativity and dedication to innovation. His work continues to shape the future of semiconductor technology, solidifying his role as a pioneer in this dynamic field.

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