The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2026
Filed:
Jul. 24, 2023
Intel Corporation, Santa Clara, CA (US);
Ehren Mannebach, Beaverton, OR (US);
Anh Phan, Beaverton, OR (US);
Aaron Lilak, Beaverton, OR (US);
Willy Rachmady, Beaverton, OR (US);
Gilbert Dewey, Beaverton, OR (US);
Cheng-Ying Huang, Portland, OR (US);
Richard Schenker, Portland, OR (US);
Hui Jae Yoo, Portland, OR (US);
Patrick Morrow, Portland, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Gate-all-around integrated circuit structures having depopulated channel structures, and methods of fabricating gate-all-around integrated circuit structures having depopulated channel structures using multiple bottom-up oxidation approaches, are described. For example, an integrated circuit structure includes a vertical arrangement of nanowires. All nanowires of the vertical arrangement of nanowires are oxide nanowires. A gate stack is over the vertical arrangement of nanowires, around each of the oxide nanowires. The gate stack includes a conductive gate electrode.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile