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For the Inventor, By the Inventor

Beaverton, OR, United States of America

Anh Phan

USPTO Granted Patents = 43 

 

Average Co-Inventor Count = 8.2

ph-index = 2

Forward Citations = 18(Granted Patents)


Company Filing History:

goldMedal43 out of 54,750 
 
Intel Corporation
 patents

Years Active: 2022-2025

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Areas of Expertise:
Stacked Transistors
Isolation Wall Structures
Epitaxial Layer
Metallization Structures
Gate-All-Around Structures
Vertical Diode Architecture
Three Dimensional Integrated Circuits
Self-Aligned Local Interconnects
Heterogeneous Bonding Layers
Oxide Volume Formation
Fin Structure Integration
Transistor Architecture
43 patents (USPTO):Explore Patents
1. 12255137 - Sideways vias in isolation areas to contact interior layers in stacked devices (2025-03-18),
2. 12224202 - Forming an oxide volume within a fin (2025-02-11),
3. 12148806 - Stacked source-drain-gate connection and process for forming such (2024-11-19),
4. 12107085 - Interconnect techniques for electrically connecting source/drain regions of stacked transistors (2024-10-01),
5. 12080605 - Backside contacts for semiconductor devices (2024-09-03),
6. 12033896 - Isolation wall stressor structures to improve channel stress and their methods of fabrication (2024-07-09),
7. 12020929 - Epitaxial layer with substantially parallel sides (2024-06-25),
8. 11996411 - Stacked forksheet transistors (2024-05-28),
9. 11996408 - Leave-behind protective layer having secondary purpose (2024-05-28),
10. 11942416 - Sideways vias in isolation areas to contact interior layers in stacked devices (2024-03-26),
11. 11916118 - Stacked source-drain-gate connection and process for forming such (2024-02-27),
12. 11894372 - Stacked trigate transistors with dielectric isolation and process for forming such (2024-02-06),
13. 11869894 - Metallization structures for stacked device connectivity and their methods of fabrication (2024-01-09),
14. 11830933 - Gate-all-around integrated circuit structures having depopulated channel structures using bottom-up oxidation approach (2023-11-28),
15. 11776898 - Sidewall interconnect metallization structures for integrated circuit devices (2023-10-03),

Title: Anh Phan: A Pioneer in Semiconductor Innovations

Introduction: Anh Phan, based in Beaverton, Oregon, has made significant contributions to the field of semiconductor technology, holding an impressive 42 patents. His innovative work primarily focuses on the development of advanced materials and manufacturing processes that enhance the performance and efficiency of electronic devices.

Latest Patents: Among Anh's most recent patents is the innovation surrounding the formation of an oxide volume within a fin. This groundbreaking technique allows for the effective integration of oxide within a silicon fin through the application of a catalytic oxidant material and subsequent annealing. Methods utilizing plasma implant or beam-line implant techniques for introducing oxygen ions into the fin further exemplify his contributions to semiconductor fabrication. Another notable patent describes a stacked source-drain-gate connection and its manufacturing process, showcasing a sophisticated configuration of epitaxial regions and dielectric structures that optimize transistor performance.

Career Highlights: Anh Phan has dedicated his career to pushing the boundaries of semiconductor technology. His tenure at Intel Corporation has enabled him to collaborate with some of the brightest minds in the industry, leading to advancements that have far-reaching implications in electronics.

Collaborations: Throughout his career, Anh has worked alongside talented colleagues such as Willy Rachmady and Aaron D. Lilak. Their collective expertise and innovative approaches have fostered an environment conducive to groundbreaking research and development within Intel Corporation.

Conclusion: Anh Phan's work epitomizes the spirit of innovation in the semiconductor field. With a robust portfolio of patents and a commitment to advancing technology, he continues to play a vital role in shaping the future of electronic devices. His contributions not only enhance device performance but also inspire future inventors and researchers in their pursuit of technological excellence.

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