The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2024
Filed:
Jun. 27, 2019
Intel Corporation, Santa Clara, CA (US);
Cheng-Ying Huang, Portland, OR (US);
Gilbert Dewey, Beaverton, OR (US);
Jack T. Kavalieros, Portland, OR (US);
Aaron Lilak, Beaverton, OR (US);
Ehren Mannebach, Beaverton, OR (US);
Patrick Morrow, Portland, OR (US);
Anh Phan, Beaverton, OR (US);
Willy Rachmady, Beaverton, OR (US);
Hui Jae Yoo, Portland, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Embodiments herein relate to systems, apparatuses, or processes directed to manufacturing transistors that include a substrate, an epitaxial layer with a first side and a second side opposite the first side, where the first side and the second side of the epitaxial layer are substantially planar, where the second side of the epitaxial layer is substantially parallel to the first side, and where the first side of the epitaxial layer is directly coupled with a side of the substrate. In particular, the epitaxial layer may be adjacent to an oxide layer having a side that is substantially planar, where the second side of the epitaxial layer is adjacent to the side of the oxide layer, and the epitaxial layer was grown and the growth was constrained by the oxide layer.