The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2024
Filed:
Jan. 09, 2024
Intel Corporation, Santa Clara, CA (US);
Ehren Mannebach, Beaverton, OR (US);
Aaron Lilak, Beaverton, OR (US);
Hui Jae Yoo, Portland, OR (US);
Patrick Morrow, Portland, OR (US);
Anh Phan, Beaverton, OR (US);
Willy Rachmady, Beaverton, OR (US);
Cheng-Ying Huang, Portland, OR (US);
Gilbert Dewey, Beaverton, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
A device is disclosed. The device includes a first epitaxial region, a second epitaxial region, a first gate region between the first epitaxial region and a second epitaxial region, a first dielectric structure underneath the first epitaxial region, a second dielectric structure underneath the second epitaxial region, a third epitaxial region underneath the first epitaxial region, a fourth epitaxial region underneath the second epitaxial region, and a second gate region between the third epitaxial region and a fourth epitaxial region and below the first gate region. The device also includes, a conductor via extending from the first epitaxial region, through the first dielectric structure and the third epitaxial region, the conductor via narrower at an end of the conductor via that contacts the first epitaxial region than at an opposite end.