This inventor holds 1 USPTO granted patent. Top assignee: Intel Corporation. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Evan Clinton and Nanoribbon Stack Innovation.
Introduction
Evan Clinton is an inventor based in Carrollton, Georgia, and is associated with Intel Corporation. His patent work concerns integrated circuit structures that use nanoribbon stacks.
Latest Patents
Clinton is named on 1 patent: “Nanoribbon Stacks Without Dielectric Protection Caps for Top Nanoribbons.” The patent describes integrated circuit structures, devices, and methods involving a stack of nanoribbons and an opening above the top nanoribbon. Gate electrode material fills the opening, whose three portions are arranged so that the material in the middle portion is narrower than in the first portion. The gate insulator along the sidewalls of the first portion is materially discontinuous from the gate insulator along the sidewalls of the third portion.
Career Highlights
Clinton’s disclosed invention addresses the design of gate structures around top nanoribbons in integrated circuits. His work is associated with Intel Corporation.
Collaborations
Rohit Galatage is identified as Clinton’s coworker. The provided information does not specify whether Galatage collaborated on the patent.
Conclusion
Evan Clinton’s patent describes a nanoribbon-based integrated circuit structure with a carefully shaped gate opening and discontinuous gate-insulator regions, reflecting his work in semiconductor innovation.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile