Diffusion cut stressors for stacked transistors

Abstract

Techniques are provided herein to form non-planar semiconductor devices in a stacked transistor configuration adjacent to stressor materials. In one example, an n-channel device and a p-channel device may both be gate-all-around transistors each having any number of nanoribbons extending in the same direction, where the n-channel device is located vertically above the p-channel device (or vice versa). Source or drain regions are adjacent to both ends of the n-channel device and both ends of the p-channel device. On the opposite side of the stacked source or drain regions (e.g., opposite from the nanoribbons), stressor materials may be used to fill the gate trench in place of additional semiconductor devices. The stressor materials may include, for instance, a compressive stressor material adjacent to the p-channel device and/or a tensile stressor material adjacent to the n-channel device. The stressor material(s) may form or otherwise be part of a diffusion cut structure.