The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2025
Filed:
Nov. 02, 2021
Intel Corporation, Santa Clara, CA (US);
Ashish Agrawal, Hillsboro, OR (US);
Gilbert Dewey, Beaverton, OR (US);
Siddharth Chouksey, Portland, OR (US);
Jack T. Kavalieros, Portland, OR (US);
Cheng-Ying Huang, Hillsboro, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
A gate-all-around transistor device includes a body including a semiconductor material, and a gate structure at least in part wrapped around the body. The gate structure includes a gate electrode and a gate dielectric between the body and the gate electrode. The body is between a source region and a drain region. A first spacer is between the source region and the gate electrode, and a second spacer is between the drain region and the gate electrode. In an example, the first and second spacers include germanium and oxygen. The body can be, for instance, a nanoribbon, nanosheet, or nanowire.