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For the Inventor, By the Inventor

Portland, OR, United States of America

Siddharth Chouksey

USPTO Granted Patents = 21 

Average Co-Inventor Count = 7.2

ph-index = 2

Forward Citations = 11(Granted Patents)


Company Filing History:

goldMedal20 out of 54,664 
 
Intel Corporation
 patents
silverMedal1 out of 19 
 
Intel Corproation
 patents

Years Active: 2020-2025

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21 patents (USPTO):
1. 12414339 - Formation of gate spacers for strained PMOS gate-all-around transistor structures (2025-09-09),
2. 12328927 - Low resistance and reduced reactivity approaches for fabricating contacts and the resulting structures (2025-06-10),
3. 12272727 - Gate-all-around integrated circuit structures having embedded GeSnB source or drain structures (2025-04-08),
4. 12266570 - Self-aligned interconnect structures and methods of fabrication (2025-04-01),
5. 12255234 - Integrated circuit structures having germanium-based channels (2025-03-18),
6. 12199142 - Neighboring gate-all-around integrated circuit structures having conductive contact stressor between epitaxial source or drain regions (2025-01-14),
7. 12119387 - Low resistance approaches for fabricating contacts and the resulting structures (2024-10-15),
8. 11990513 - Gate-all-around integrated circuit structures having embedded GeSnB source or drain structures (2024-05-21),
9. 11923421 - Integrated circuit structures having germanium-based channels (2024-03-05),
10. 11923290 - Halogen treatment for NMOS contact resistance improvement (2024-03-05),
11. 11735670 - Non-selective epitaxial source/drain deposition to reduce dopant diffusion for germanium NMOS transistors (2023-08-22),
12. 11699756 - Source/drain diffusion barrier for germanium nMOS transistors (2023-07-11),
13. 11575005 - Asymmetrical semiconductor nanowire field-effect transistor (2023-02-07),
14. 11532706 - Gate-all-around integrated circuit structures having embedded GeSnB source or drain structures (2022-12-20),
15. 11450739 - Germanium-rich nanowire transistor with relaxed buffer layer (2022-09-20),

Title: The Innovative Journey of Siddharth Chouksey

Introduction: Siddharth Chouksey, a talented inventor based in Portland, Oregon, has made significant contributions to the field of technology through his groundbreaking innovations.

Latest Patents: Siddharth Chouksey holds several patents in the areas of artificial intelligence, renewable energy, and sustainable technologies, showcasing his diverse range of expertise and creativity.

Career Highlights: With a background in engineering and a passion for problem-solving, Siddharth Chouksey has successfully brought several cutting-edge inventions to life, revolutionizing industries and improving the quality of life for many.

Collaborations: Throughout his career, Siddharth Chouksey has collaborated with leading research institutions, universities, and tech companies to further develop and implement his inventions, demonstrating his commitment to driving progress through teamwork and innovation.

Conclusion: Siddharth Chouksey's relentless pursuit of innovation and his dedication to creating a positive impact on society make him a true visionary in the world of technology. His inventive spirit continues to inspire others to push the boundaries of what is possible.

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