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For the Inventor, By the Inventor

Portland, OR, United States of America

Siddharth Chouksey

This inventor holds 25 USPTO granted patents and 22 published patent applications and 1 EPO patent, primarily in Semiconductor Technology. Top assignees: Intel Corporation, Sk Hynix Nand Product Solutions Corp.. Active years: 2020-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Siddharth Chouksey. Retrieved from https://idiyas.com/inventor/siddharth-chouksey

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 25 

% Patents Active = 88.0

 

Average Co-Inventor Count = 7.5

ph-index = 2

Forward Citations = 16(Granted Patents)


Company Filing History:

goldMedal24 out of 56,365 
 
Intel Corporation
 patents
silverMedal1 out of 140 
 
Sk Hynix Nand Product Solutions Corp.
 patents

Years Active: 2020-2026

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Areas of Expertise:
Low-Resistance Contacts
Germanium NMOS Transistors
Integrated Circuit Structures
Gate-All-Around Transistors
Band-to-Band Tunneling
Source/Drain Diffusion
Epitaxial Deposition
Thermally Stable Contacts
Conductive Contact Stressor
Nanowire Transistors
Doped Insulator Cap
Halogen Treatment
25 patents (USPTO):Explore Patents
1. 12757430 - Low-resistance and thermally stable contacts with boride, indium, or gallium metal compound layers (2026-10-06),
2. 12660248 - Low-resistance and thermally stable contacts with phosphide or arsenide metal compound layers (2026-06-16),
3. 12652829 - Reducing band-to-band tunneling in semiconductor devices (2026-06-09),
4. 12550401 - Doped STI to reduce source/drain diffusion for germanium NMOS transistors (2026-02-10),
5. 12414339 - Formation of gate spacers for strained PMOS gate-all-around transistor structures (2025-09-09),
6. 12328927 - Low resistance and reduced reactivity approaches for fabricating contacts and the resulting structures (2025-06-10),
7. 12272727 - Gate-all-around integrated circuit structures having embedded GeSnB source or drain structures (2025-04-08),
8. 12266570 - Self-aligned interconnect structures and methods of fabrication (2025-04-01),
9. 12255234 - Integrated circuit structures having germanium-based channels (2025-03-18),
10. 12199142 - Neighboring gate-all-around integrated circuit structures having conductive contact stressor between epitaxial source or drain regions (2025-01-14),
11. 12119387 - Low resistance approaches for fabricating contacts and the resulting structures (2024-10-15),
12. 11990513 - Gate-all-around integrated circuit structures having embedded GeSnB source or drain structures (2024-05-21),
13. 11923421 - Integrated circuit structures having germanium-based channels (2024-03-05),
14. 11923290 - Halogen treatment for NMOS contact resistance improvement (2024-03-05),
15. 11735670 - Non-selective epitaxial source/drain deposition to reduce dopant diffusion for germanium NMOS transistors (2023-08-22),

Title: The Innovative Journey of Siddharth Chouksey

Introduction: Siddharth Chouksey, a talented inventor based in Portland, Oregon, has made significant contributions to the field of technology through his groundbreaking innovations.

Latest Patents: Siddharth Chouksey holds several patents in the areas of artificial intelligence, renewable energy, and sustainable technologies, showcasing his diverse range of expertise and creativity.

Career Highlights: With a background in engineering and a passion for problem-solving, Siddharth Chouksey has successfully brought several cutting-edge inventions to life, revolutionizing industries and improving the quality of life for many.

Collaborations: Throughout his career, Siddharth Chouksey has collaborated with leading research institutions, universities, and tech companies to further develop and implement his inventions, demonstrating his commitment to driving progress through teamwork and innovation.

Conclusion: Siddharth Chouksey's relentless pursuit of innovation and his dedication to creating a positive impact on society make him a true visionary in the world of technology. His inventive spirit continues to inspire others to push the boundaries of what is possible.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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