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Portland, OR, United States of America

Siddharth Chouksey

Average Co-Inventor Count = 7.23

ph-index = 2

The patent ph-index is calculated by counting the number of publications for which an author has been cited by other authors at least that same number of times.

Forward Citations = 11

Siddharth ChoukseyAnand S Murthy (18 patents)Siddharth ChoukseyJack T Kavalieros (17 patents)Siddharth ChoukseyTahir Ghani (12 patents)Siddharth ChoukseyGlenn A Glass (12 patents)Siddharth ChoukseySeung Hoon Sung (12 patents)Siddharth ChoukseyAshish Agrawal (10 patents)Siddharth ChoukseyCory C Bomberger (10 patents)Siddharth ChoukseyBenjamin Chu-Kung (8 patents)Siddharth ChoukseyHarold W Kennel (5 patents)Siddharth ChoukseyKarthik Jambunathan (5 patents)Siddharth ChoukseyGilbert W Dewey (4 patents)Siddharth ChoukseyMatthew V Metz (4 patents)Siddharth ChoukseyNazila Haratipour (3 patents)Siddharth ChoukseySusmita Ghose (3 patents)Siddharth ChoukseyWilly Rachmady (2 patents)Siddharth ChoukseyCheng-Ying Huang (2 patents)Siddharth ChoukseyArnab Sen Gupta (2 patents)Siddharth ChoukseyRyan Keech (2 patents)Siddharth ChoukseyDipanjan Basu (2 patents)Siddharth ChoukseyJitendra Kumar Jha (2 patents)Siddharth ChoukseyKoustav Ganguly (2 patents)Siddharth ChoukseyMengcheng Lu (2 patents)Siddharth ChoukseyVan H Le (1 patent)Siddharth ChoukseyStephen M Cea (1 patent)Siddharth ChoukseyBiswajeet Guha (1 patent)Siddharth ChoukseyChristopher J Jezewski (1 patent)Siddharth ChoukseyKimin Jun (1 patent)Siddharth ChoukseyScott Bruce Clendenning (1 patent)Siddharth ChoukseyJessica M Torres (1 patent)Siddharth ChoukseyI-Cheng Tung (1 patent)Siddharth ChoukseyEric Charles Mattson (1 patent)Siddharth ChoukseySouvik Ghosh (1 patent)Siddharth ChoukseySiddharth Chouksey (21 patents)Anand S MurthyAnand S Murthy (347 patents)Jack T KavalierosJack T Kavalieros (626 patents)Tahir GhaniTahir Ghani (496 patents)Glenn A GlassGlenn A Glass (173 patents)Seung Hoon SungSeung Hoon Sung (144 patents)Ashish AgrawalAshish Agrawal (48 patents)Cory C BombergerCory C Bomberger (39 patents)Benjamin Chu-KungBenjamin Chu-Kung (195 patents)Harold W KennelHarold W Kennel (79 patents)Karthik JambunathanKarthik Jambunathan (43 patents)Gilbert W DeweyGilbert W Dewey (398 patents)Matthew V MetzMatthew V Metz (306 patents)Nazila HaratipourNazila Haratipour (33 patents)Susmita GhoseSusmita Ghose (13 patents)Willy RachmadyWilly Rachmady (360 patents)Cheng-Ying HuangCheng-Ying Huang (86 patents)Arnab Sen GuptaArnab Sen Gupta (19 patents)Ryan KeechRyan Keech (18 patents)Dipanjan BasuDipanjan Basu (11 patents)Jitendra Kumar JhaJitendra Kumar Jha (6 patents)Koustav GangulyKoustav Ganguly (5 patents)Mengcheng LuMengcheng Lu (5 patents)Van H LeVan H Le (252 patents)Stephen M CeaStephen M Cea (126 patents)Biswajeet GuhaBiswajeet Guha (103 patents)Christopher J JezewskiChristopher J Jezewski (73 patents)Kimin JunKimin Jun (73 patents)Scott Bruce ClendenningScott Bruce Clendenning (47 patents)Jessica M TorresJessica M Torres (13 patents)I-Cheng TungI-Cheng Tung (12 patents)Eric Charles MattsonEric Charles Mattson (3 patents)Souvik GhoshSouvik Ghosh (1 patent)
..
Inventor’s number of patents
..
Strength of working relationships

Company Filing History:

1. Intel Corporation (20 from 54,664 patents)

2. Intel Corproation (1 from 19 patents)


21 patents:

1. 12414339 - Formation of gate spacers for strained PMOS gate-all-around transistor structures

2. 12328927 - Low resistance and reduced reactivity approaches for fabricating contacts and the resulting structures

3. 12272727 - Gate-all-around integrated circuit structures having embedded GeSnB source or drain structures

4. 12266570 - Self-aligned interconnect structures and methods of fabrication

5. 12255234 - Integrated circuit structures having germanium-based channels

6. 12199142 - Neighboring gate-all-around integrated circuit structures having conductive contact stressor between epitaxial source or drain regions

7. 12119387 - Low resistance approaches for fabricating contacts and the resulting structures

8. 11990513 - Gate-all-around integrated circuit structures having embedded GeSnB source or drain structures

9. 11923290 - Halogen treatment for NMOS contact resistance improvement

10. 11923421 - Integrated circuit structures having germanium-based channels

11. 11735670 - Non-selective epitaxial source/drain deposition to reduce dopant diffusion for germanium NMOS transistors

12. 11699756 - Source/drain diffusion barrier for germanium nMOS transistors

13. 11575005 - Asymmetrical semiconductor nanowire field-effect transistor

14. 11532706 - Gate-all-around integrated circuit structures having embedded GeSnB source or drain structures

15. 11450739 - Germanium-rich nanowire transistor with relaxed buffer layer

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12/4/2025
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